TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −10 V Emitter-base voltage VEBO −7 V DC IC −2.0 Pulse ICP −3.5 IB −200 PC 1.6 Collector current Base current t = 10 s Collector power dissipation (Note) DC Junction temperature Storage temperature range A mA W 0.8 Tj 150 °C Tstg −55~150 °C JEDEC ― JEITA ― TOSHIBA 2-3T1 Weight: 0.011 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 2 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 −100 nA V (BR) CEO IC = −10 mA, IB = 0 −10 V hFE (1) VCE = −2 V, IC = −0.2 A 200 500 hFE (2) VCE = −2 V, IC = −0.6 A 125 Collector-emitter saturation voltage VCE (sat) IC = −0.6 A, IB = −0.02 A −0.19 V Base-emitter saturation voltage VBE (sat) IC = −0.6 A, IB = −0.02 A −1.10 V VCB = −10 V, IE = 0, f = 1 MHz 12 pF See Figure 1 circuit diagram. 50 VCC ∼ − −6 V, RL = 10 Ω 115 IB1 = −IB2 = −20 mA 25 Collector-emitter breakdown voltage DC current gain Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf 1 ns 2002-03-18 TPC6602 Circuit Configuration IB2 Input IB1 IB1 6 4 H3B Output IB2 1 Duty cycle < 1% Figure 1 5 RL VCC 20 µs Marking 2 3 Switching Time Test Circuit & Timing Chart 2 2002-03-18 TPC6602 IC – VCE hFE – IC −2 10000 −60 −40 −20 hFE −1.6 DC current gain Collector current IC (A) −80 −10 −1.2 −6 −0.8 −4 Common emitter VCE = −2 V Single pulse test 1000 Ta = 100°C 100 25 IB = −2 mA −0.4 10 −0.001 Common emitter Ta = 25°C Single pulse test 0 0 −0.2 −0.4 −0.6 −0.8 −1 Collector-emitter voltage VCE −0.01 Collector current −1 IC −10 (A) (V) VBE (sat) – IC −10 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 30 Single pulse test −0.1 Ta = 100°C −55 25 −0.01 −0.001 −0.001 −0.1 −1.2 VCE (sat) – IC −1 Collector-emitter saturation voltage VCE (sat) (V) −55 −0.01 −0.1 Collector current −1 IC Common emitter IC/IB = 30 Single pulse test −55 Ta = 100°C −0.1 −0.001 −10 (A) 25 −1 −0.01 −0.1 Collector current −1 IC −10 (A) IC – VBE Collector current IC (A) −2 −1.6 Common emitter VCE = −2 V Single pulse test −1.2 −0.8 −0.4 0 0 Ta = 100°C −0.4 25 −55 −0.8 Base-emitter voltage VBE −1.2 −1.6 (V) 3 2002-03-18 TPC6602 rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, 2 Cu area: 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area −10 IC max (Pulse) * 10 ms* 1 ms* 100 ms* −1 10 s* DC operation (Ta = 25°C) −0.1 *: Single pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 VCEO max Collector current IC (A) IC max (continuous) −10 Collector-emitter voltage VCE −100 (V) 4 2002-03-18 TPC6602 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 5 2002-03-18