SSM5G01TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode SSM5G01TU DC-DC Converter for DSCs and Camcorders • Co-packaged Pch MOSFET and Schottky Diode. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V ID −1.0 Drain current DC Pulse Channel temperature Channel temperature IDP (Note 2) −2.0 PD (Note 1) 0.5 t = 10s 0.8 Tch 150 A W °C UFV Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE Characteristics JEDEC ― JEITA ― Symbol Rating Unit VRM 25 V TOSHIBA Reverse voltage VR 20 V Weight: 7 mg (typ.) Average forward current IO 0.5 A IFSM 2 (50 Hz) A Tj 125 °C Maximum (peak) reverse voltage Peak one cycle surge forward current (non-repetitive) Junction temperature 2-2R1A Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Symbol Rating Unit Storage temperature Tstg −55~125 °C Operating temperature Topr (Note 3) −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature. 1 2007-11-01 SSM5G01TU Marking Equivalent Circuit 5 4 5 3 1 4 KEA 1 2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 2 2007-11-01 SSM5G01TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain Cut-off current Test Condition VGS = ±16 V, VDS = 0 Min Typ. Max Unit ⎯ ⎯ ±1 μA V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = 20 V −15 ⎯ ⎯ IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −1 μA −0.8 ⎯ −1.8 V (Note 4) 0.5 1.0 ⎯ S ID = −0.5 A, VGS = −10 V (Note 4) ⎯ 0.3 0.4 ID = −0.5 A, VGS = −4 V (Note 4) ⎯ 0.6 0.8 Gate threshold voltage Vth VDS = −5 V, ID = −0.1 mA Forward transfer admittance |Yfs| VDS = −5 V, ID = −0.5 A Drain-Source ON resistance RDS (ON) Ω Input capacitance Ciss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 86 ⎯ pF Reverse transfer capacitance Crss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 14 ⎯ pF Output capacitance Coss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 25 ⎯ pF Switching time Turn-on time ton VDD = −15 V, ID = −0.5 A ⎯ 14 ⎯ Turn-off time toff VGS = 0~−4 V, RG = 10 Ω ⎯ 8.5 ⎯ ns Note 4: Pulse measurement Switching Time Test Circuit (a) Test circuit 0 OUT 10 μs RG IN −4 V (b) VIN VDD = −15 V RG = 10 Ω Duty < = 1% VIN: tr, tf < 5 ns Common source Ta = 25°C 0V 10% 90% −4 V VDS (ON) 90% (c) VOUT VDD 10% VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 3 2007-11-01 SSM5G01TU Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 0.3 A ⎯ 0.38 0.45 V VF (2) IF = 0.5 A ⎯ 0.43 ⎯ V Reverse current IR VR = 20 V ⎯ ⎯ 50 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 46 ⎯ pF Forward voltage Precaution The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. 4 2007-11-01 SSM5G01TU ID – VDS (MOSFET) −2 Common Source Ta = 25°C −4.5 −10 ID – VGS (MOSFET) −10000 −1000 (mA) −3.5 Drain current ID Drain current ID (A) −4.0 −1.5 −1 −3.0 −0.5 VGS = −2.5 V 0 0 −0.5 −1 −1.5 Drain-Source voltage Common Source VDS = −5 V −100 −25°C Ta = 100°C −10 25°C −1 −0.1 −0.01 0 −2 −1 −2 Gate-Source voltage VDS (V) RDS (ON) – ID (MOSFET) −5 VGS (V) RDS (ON) – VGS (MOSFET) 1 2 Common Source Common Source Ta = 25°C ID = −0.5 A VGS = −4 V 0.8 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) −4 −3 0.6 0.4 −10 V 0.2 1.6 1.2 0.8 Ta = 100°C 25°C 0.4 −25°C 0 0 −0.5 −1.0 −1.5 0 0 −2.0 −5 Drain current ID (A) −10 −15 Gate-Source voltage RDS (ON) – Ta (MOSFET) Vth – Ta (MOSFET) Common Source Common Source Vth (V) VGS = −4.0 V Gate threshold voltage Drain-Source on resistance RDS (ON) (Ω) ID = −0.5 A 0.8 0.6 −10 V 0.4 0.2 0 −25 VGS (V) −3 1.2 1 −20 0 25 50 75 100 125 ID = −0.1 mA −2 −1.5 −1 −0.5 0 −25 150 VDS = −5 V −2.5 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 5 2007-11-01 SSM5G01TU |Yfs| – ID (MOSFET) C – VDS (MOSFET) 500 300 0.3 0.1 0.01 0.03 (pF) 1 100 Capacitance C Forward transfer admittance ⎪Yfs⎪ (S) 3 50 −10 −100 30 Coss 10 Crss Common Source 5 Common Source VDS = −5 V 3 Ta = 25°C f = 1 MHz VGS = 0 V 1 −0.1 Ta = 25°C 0.001 −1 Ciss −1000 −10000 Drain current ID (mA) −1 Drain-Source voltage Dynamic input characteristic (MOSFET) VDS (V) 300 Common Source ID = −1 A Ta = 25°C Common Source Switching time t (ns) VGS (V) Gate-Source voltage −100 t – ID (MOSFET) −10 −8 −10 −12 V −6 VDD = −24 V −4 VDD = −15 V VGS = 0∼ −4 V Ta = 25°C RG = 10 Ω 100 toff 30 10 −2 tf ton tr 3 −0.01 0 0 1 2 3 −0.03 −0.1 −0.3 −1 −3 Drain current ID (A) Total gate charge Qg (nC) IDR – VDS (MOSFET) −2 Drain reverse current IDR (A) Common Source VGS = 0 −1.6 Ta = 25°C D IDR G −1.2 S −0.8 −0.4 0 0 0.2 0.4 0.6 Drain-Source voltage 0.8 1 VDS (V) 6 2007-11-01 SSM5G01TU rth – tw (MOSFET) Transient thermal impedance rth (°C /W) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw PD – Ta (MOSFET) 1.2 ID max (continuous) DC operation Ta = 25°C Mounted on FR4 board 1 ms* Drain power dissipation PD (W) (A) Drain current ID ID max (pulsed) −0.3 1000 (s) Safe operating area (MOSFET) −3 −1 100 10 ms* 10 s* −0.1 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) −0.03 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 Drain-Source voltage −10 Cu Pad: 645 mm2) t = 10 s 0.8 0.6 DC 0.4 0.2 0 0 VDSS max (25.4 mm × 25.4 mm × 1.6 t, 1 50 100 150 Ambient temperature Ta (°C) −100 VDS (V) 7 2007-11-01 SSM5G01TU IF – VF (SBD) IR – VR (SBD) 1000 10 100 (mA) 100 75 100 Reverse current IR Forward current IF (mA) 125 50 Ta = 25°C 10 1 75 0.1 50 Ta = 25°C 0.01 0 1 0 0.1 0.2 0.4 0.3 0.5 Pulse measurement 0.001 0 5 0.7 10 Reverse voltage (V) rth – tw (SBD) 15 VR 100 1 0.001 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 00.1 0.1 1 Pulse width 10 (V) f = 1 MHz Ta = 25°C 1000 10 20 CT – VR (SBD) 3000 1000 Total capacitance CT (pF) Transient thermal impedance rth (°C/W) Forward voltage VF 0.6 100 1000 tw (s) 100 10 1 0.01 0.1 1 Reverse voltage 8 10 VR 100 (V) 2007-11-01 SSM5G01TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-11-01