SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm Ron = 410 mΩ (max) (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 2.1±0.1 Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS ± 20 V DC ID 1.5 Pulse IDP 3.0 PD (Note 1) 800 PD (Note 2) 500 Drain current Drain power dissipation 1 3 2 A 0.7±0.05 Characteristic 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.3 -0.05 1.7±0.1 0.166±0.05 4 V drive Low ON-resistance: 0.65±0.05 • • mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 1: Gate 2: Source 3: Drain Note: UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Symbol V (BR) DSS Test Condition Min Typ. Max Unit ID = 1 mA, VGS = 0 20 ⎯ ⎯ V Drain cutoff current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 20 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 5 V, ID = 0.1 mA 1.1 ⎯ 2.3 V S Gate threshold voltage Forward transfer admittance ⏐Yfs⏐ Drain–source ON-resistance RDS (ON) Input capacitance Ciss VDS = 5 V, ID = 0.6 A (Note3) 0.68 1.36 ⎯ ID = 0.6 A, VGS = 10 V (Note3) ⎯ 135 200 ID = 0.6 A, VGS = 4 V (Note3) ⎯ 250 410 ⎯ 60 ⎯ pF VDS = 10 V, VGS = 0, f = 1 MHz mΩ Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 47 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 17 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.6 A, ⎯ 19 ⎯ Turn-off time toff VGS = 0 to 4 V, RG = 10 Ω ⎯ 10 ⎯ ⎯ – 0.9 – 1.2 Drain–source forward voltage VDSF ID = − 1.5 A, VGS = 0 V (Note3) ns V Note3: Pulse test 1 2007-11-01 SSM3K107TU Switching Time Test Circuit (a) Test Circuit (b) VIN 4V OUT 4 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 10 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK7 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K107TU ID – VDS 3.0 6V (A) 2.0 3.7V ID 1.5 VGS = 3.3V 1.0 0.5 0.1 Ta = 100 °C 0 0.2 0.4 0.6 0.8 Drain–source voltage VDS 25 °C 0.01 −25 °C 0.001 Common Source Ta = 25°C 0 VDS = 5 V 1 Drain current 4V Drain current (A) Common Source 2.5 ID 10 V ID – VGS 10 0.0001 0 1 0.5 (V) 1.0 3.5 VGS (V) 4.0 600 ID = 0.6 A Common Source Common Source 500 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 3.0 RDS (ON) – ID RDS (ON) – VGS 400 300 Ta =100 °C 25 °C 200 100 −25 °C 0 2 4 6 Gate–source voltage 8 VGS 500 Ta = 25°C 400 300 VGS = 4.0Ｖ 200 10V 100 0 10 0 1 2 (V) RDS (ON) – Ta ID 5 (A) Vth – Ta Vth (V) Gate threshold voltage 400 ID = 0.6A / VGS = 4.0 V 200 0.6 A / 10V 100 0 −50 4 2.0 Common Source 300 3 Drain current 500 Drain–source on-resistance RDS (ON) (mΩ) 2.5 Gate–source voltage 600 0 2.0 1.5 1.5 1.0 0.5 VDS = 5 V 0 0 50 Ambient temperature 100 Ta −50 150 (°C) Common source ID = 0.1 mA 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM3K107TU IDR – VDS 10 10 Common Source (A) Common Source VDS = 5 V 3 VGS = 0 V 1 1 0.3 0.1 0.01 1 0.1 Drain current ID IDR G 0.1 S 0.01 0.001 0.0001 0 10 D Ta = 25°C IDR Ta = 25°C Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID –0.2 (A) –0.4 –0.6 –0.8 Drain–source voltage –1.0 VDS –1.2 (V) t – ID C – VDS 1000 600 Common Source toff 100 t tf Switching time Capacitance C (pF) 300 (ns) Ta = 25°C f = 1 MHz VGS = 0 V 500 100 Ciss 50 Coss 30 10 1 10 Drain–source voltage 1 0.01 100 VDS Common Source VDD = 10 V VGS = 0 to 4 V Ta = 25°C RG = 10 Ω tr Crss 10 0.1 ton 0.1 Drain current (V) ID (A) 600 (V) Transient thermal impedance Rth (°C/W) 10 VGS 10 t – ID Dynamic Input Characteristic Gate-Source voltage 1 8 c b a 100 VDD = 16 V 6 4 2 0 10 a: Mounted on a ceramic board Common Source ID = 1.2 A Ta = 25 °C 0 1 2 Total gate charge 3 Qg (25.4 x 25.4 x 0.8 mm 2 Cu Pad : 645 mm ) b: Mounted on an FR4 board 1 4 0.001 (nC) 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 0.01 0.1 1 Pulse Width 4 10 100 600 tw (s) 2007-11-01 SSM3K107TU PD – Ta 1000 Drain Power Dissipation 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) b: Mounted on a ceramic board 800 PD (mW) a: Mounted on an FR4 board 2 b 600 a 400 200 0 –40 –20 0 20 40 60 80 Ambient temperature 100 120 140 160 Ta (°C) 5 2007-11-01 SSM3K107TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01