GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 30 1 ms ICP 60 PC 155 W Tj 150 °C Tstg −55~150 °C Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g 1 2002-01-18 GT30J101 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 3 mA, VCE = 5 V 5.0 8.0 V VCE (sat) IC = 30 A, VGE = 15 V 2.1 2.7 V VCE = 20 V, VGE = 0, f = 1 MHz 2200 pF Inductive Load 0.12 VCC = 300 V, IC = 30 A 0.40 VGG = ±15 V, RG = 43 Ω 0.15 0.30 0.70 0.81 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Cies Rise time tr Turn-on time ton Fall time tf Turn-off time toff Thermal resistance (Note1) Rth (j-c) µs °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT30J301 90% 10% 0 −VGE IC L RG IC VCC 90% VCE 0 VCE 10% 10% 90% 10% td (on) td (off) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 10% VCE Eoff Eon 2 2002-01-18 GT30J101 IC – VCE VCE – VGE 100 (V) Common emitter Tc = 25°C IC 20 15 Collector-emitter voltage VCE (A) 80 20 13 Collector current 60 12 40 20 VGE = 10 V 0 0 1 2 3 4 Collector-emitter voltage VCE 16 12 8 60 20 4 30 IC = 10 A 0 0 5 Common emitter Tc = −40°C (V) 4 8 Gate-emitter voltage 20 (V) Common emitter Tc = 25°C Collector-emitter voltage VCE (V) Collector-emitter voltage VCE 16 12 8 60 20 4 30 IC = 10 A 0 0 4 8 12 16 VGE 16 12 8 20 4 0 0 20 4 8 16 VGE 20 (V) VCE (sat) – Tc (A) Collector-emitter saturation voltage VCE (sat) (V) Common IC Collector current 12 4 Common emitter VCE = 5 V 40 25 20 Tc = 125°C 4 60 30 Gate-emitter voltage (V) 60 0 0 (V) Common emitter Tc = 125°C IC – VGE 80 VGE 20 IC = 10 A Gate-emitter voltage 100 16 VCE – VGE VCE – VGE 20 12 8 emitter VGE = 15 V 60 3 50 40 30 2 20 10 IC = 5 A 1 −40 12 Gate-emitter voltage 16 VGE 0 −60 20 (V) −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-01-18 GT30J101 Switching time ton, tr – RG Switching time ton, tr – IC 3 (µs) ton, tr 0.5 tr 0.3 Switching time (µs) ton, tr ton 1 Switching time 10 Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C 0.1 0.05 0.03 3 10 30 100 Gate resistance RG 300 3 1 Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.5 0.3 0.1 tr 0.05 0.03 0.01 0 1000 5 5 (µs) 3 toff, tf toff 0.5 0.3 Switching time (µs) toff, tf Switching time 1 15 20 IC 25 30 (A) Switching time toff, tf – IC 10 Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C 10 Collector current (Ω) Switching time toff, tf – RG 3 ton tf 0.1 1 Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C toff 0.5 0.3 0.1 tf 0.05 0.03 0.05 0.03 3 10 30 100 Gate resistance RG Switching loss 300 0.01 0 1000 (Ω) Common emitter VCC = 300 V VGG = ±15 V IC = 30 A : Tc = 25°C : Tc = 125°C Note2 0.1 0.03 1 3 10 30 100 Gate resistance RG 300 (mJ) 1 Switching loss Eoff 3 Eon, Eoff (mJ) Eon, Eoff Switching loss 10 0.3 15 Switching loss Eon, Eoff – RG Eon 1 10 20 Collector current 10 3 5 (Ω) 30 Eon, Eoff – IC Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2 Eon Eoff 0.1 0.03 5 10 15 Collector current 4 25 (A) 0.3 0.01 0 1000 IC 20 IC 25 30 (A) 2002-01-18 GT30J101 VCE, VGE – QG C – VCE 500 10000 20 1000 Capacitance 300 100 Coes Common emitter VGE = 0 30 f = 1 MHz Tc = 25°C 10 0.3 1 Cres 3 10 30 100 Collector-emitter voltage VCE 300 300 300 VCE = 100 V 200 20 40 8 60 Gate charge Safe operating area QG 0 100 80 (nC) Reverse bias SOA 100 IC max (pulsed)* 50 IC max (continuous) 30 100 µs* 50 50 µs* (A) (A) 30 10 IC 1 ms* DC operation 5 3 Collector current IC Collector current 200 4 (V) 100 10 ms* *: Single nonrepetitive pulse Tc = 25°C 0.5 Curves must be derated 0.3 1 0.1 1 linearly with increase in temperature. 3 10 10 10 10 10 10 10 10 5 3 1 0.5 0.3 Tj < = 125°C VGE = ±15 V RG = 43 Ω 30 100 300 Collector-emitter voltage VCE Transient thermal impedance Rth (t) (°C/W) 12 100 0 0 1000 16 (V) RL = 10 Ω 400 Tc = 25°C VGE Collector-emitter voltage VCE Cies C (pF) 3000 Gate-emitter voltage (V) Common emitter 1000 0.1 1 3000 (V) 3 10 30 100 300 Collector-emitter voltage VCE 1000 3000 (V) Rth (t) – tw 2 1 0 −1 −2 −3 Tc = 25°C 10 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2002-01-18 GT30J101 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-01-18