DMG4468LK3 N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: TO252-3L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.33 grams (approximate) D D G D G TOP VIEW Maximum Ratings S S Equivalent Circuit PIN OUT -TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value 30 ±20 9.7 6.3 48 Symbol PD RθJA TJ, TSTG Value 1.68 74.3 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG4468LK3 Document number: DS31958 Rev. 2 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4468LK3 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.05 - 1.95 V RDS (ON) - 11 17 16 25 mΩ |Yfs| VSD - 8 0.73 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 867 85 81 1.39 18.85 2.59 6.15 5.46 14.53 18.84 6.01 - pF pF pF Ω nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 11.6A VDD = 15V, VGS = 10V, RL = 1.3Ω, RG = 3Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 30 VDS = 5.0V VGS = 10V 25 VGS = 4.5V ID, DRAIN CURRENT(A) ID , DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 4.0V 20 VGS = 3.5V 15 10 15 10 TA = 150°C TA = 125°C 5 T A = 85°C VGS = 3.0V 5 TA = 25°C TA = -55°C 0 VGS = 2.5V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics DMG4468LK3 Document number: DS31958 Rev. 2 - 2 2 2 of 6 www.diodes.com 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 4 October 2009 © Diodes Incorporated RDS(on) DRAIN SOURCE ON-RESISTANCE (Ω) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.040 0.036 0.032 0.028 0.024 VGS = 4.5V 0.020 0.016 VGS = 10V 0.012 0.008 0.004 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V 0.04 T A = 150°C 0.03 TA = 125°C TA = 85°C 0.02 TA = 25°C T A = -55°C 0.01 0 0 20 5 10 15 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05 RDS(ON) STATIC DRAIN SOURCE ON-STATE RESISTANCE (Ω) 1.5 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.05 30 1.7 1.3 1.1 VGS = 4.5A ID = 5A 0.9 VGS = 10A ID = 10A 0.7 0.04 0.03 VGS = 10A ID = 10A 0.02 0.01 0 -50 0.5 -50 3.0 VGS = 4.5A ID = 5A 0 25 50 75 100 125 150 TA AMBIENT TEMPERATURE (°C) Fig. 6 Typical Static Drain-Source On-State Resistance vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 10,000 2.5 IDSS, LEAKAGE CURRENT (nA) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4468LK3 2.0 ID = 1mA 1.5 ID = 250µA 1.0 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 0.5 TA = 25°C 0 -50 1 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG4468LK3 Document number: DS31958 Rev. 2 - 2 3 of 6 www.diodes.com 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Drain-Source Leakage Current vs Voltage October 2009 © Diodes Incorporated DMG4468LK3 20 1,000 IGSS, LEAKAGE CURRENT(nA) IS, SOURCE CURRENT (A) T A = 25°C 16 14 12 10 8 6 4 100 TA = 85°C 10 TA = 125°C TA = 150°C T A = -55°C TA = 25°C 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 2 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 10 Gate-Source Leakage Current vs. Voltage 1.2 1,000 4 100 100 T A = 125°C TA = 150°C T A = 85°C 10 TA = -55°C T A = 25°C 1 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 11 Gate-Source Leakage Current vs. Voltage Single Pulse RθJA = 77°C/W RθJA(t) = RθJA * r(t) TJ - TA = P * RθJA(t) 90 P(pk), PEAK TRANSIENT POWER (W) IGSS, LEAKAGE CURRENT(nA) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 12 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 18 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 76°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG4468LK3 Document number: DS31958 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG4468LK3 Ordering Information (Note 7) Part Number DMG4468LK3-13 NEW PRODUCT Notes: Case TO252-3L Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information = Manufacturer’s Marking N4468L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) N4468L YYWW Package Outline Dimensions E b3 TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0° 10° All Dimensions in mm L3 D b2 e L4 b A1 A H a SEATING PLANE L C2 Suggested Pad Layout X2 Y2 C Y1 X1 DMG4468LK3 Document number: DS31958 Rev. 2 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4468LK3 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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