DIODES DMN1019UFDE

 DMN1019UFDE
Green
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
V(BR)DSS
RDS(ON) max
12V
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
Package
ID max
TA = +25°C
U-DFN2020-6
Type E
11A
10
9A
8A
5A
•
•
•
•
•
•
•
•
0.6mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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•
•
Mechanical Data
•
•
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.007 grams (approximate)
•
•
Applications
•
Load Switching
Battery Management Application
Power Management Functions
Drain
U-DFN2020-6
Type E
Pin1
Gate
ESD PROTECTED
Gate
Protection
Diode
Pin Out
Bottom View
Bottom View
Source
Equivalent Circuit
Ordering Information (Note 4)
Marking
N7
Part Number
DMN1019UFDE-7
Notes:
Reel size (inches)
7
Quantity per reel
3,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YM
ADVANCE INFORMATION
Product Summary
N7
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
Mar
3
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
July 2012
© Diodes Incorporated
DMN1019UFDE
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
12
±8
11
9
ID
Units
V
V
A
14
11
3.0
100
ID
Maximum Continuous Body Diode Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IS
IDM
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
80
70
PD
RθJA
°C/W
W
°C/W
°C
RDS(on)
Limited
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
DMN1019UFDE
RθJA
W
PW = 10µs
Single Pulse
RθJA = 178°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
DUT on MRP
60
Datasheet number: DS35561 Rev. 4 - 2
PD
Units
100
ID , DRAIN CURRENT (A)
90
Value
0.69
0.44
182
118
2.17
1.38
58
38
10
-55 to +150
RθJc
TJ, TSTG
100
P(PK), PEAK TRANSIENT POIWER (W)
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1
PW = 1ms
TJ(max) = 150°C
TA = 25°C
Single Pulse
DUT on 1 * MRP Board
VGS = 8V
0.01
0.01
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PW = 100µs
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
July 2012
© Diodes Incorporated
DMN1019UFDE
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 178°C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
12
—
—
—
—
—
—
1
±2
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.35
RDS (ON)
—
|Yfs|
VSD
—
—
0.8
10
12
14
18
41
—
1.2
V
Static Drain-Source On-Resistance
—
7
8
10
14
28
28
0.8
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 9.7A
VGS = 2.5V, ID = 9A
VGS = 1.8V, ID = 8.1A
VGS = 1.5V, ID = 4.5A
VGS = 1.2V, ID = 2.4A
VDS = 4V, ID = 9.7A
VGS = 0V, IS = 10A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2425
396
375
1.1
50.6
27.3
3.4
5.2
7.6
22.2
57.6
16.8
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 8V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
Test Condition
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 4V, ID = 10A
ns
VDD = 4V, VGS = 10V, ID = 10A
RG = 1Ω, RL = 0.4Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
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© Diodes Incorporated
30
25
25
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
20
15
10
5
VDS = 5.0V
20
15
TA = 150°C
10
T A = 125°C
TA = 85°C
5
TA = 25°C
0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
0.012
VGS = 4.5V
0.008
VGS = 2.5V
VGS = 1.8V
0.004
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.016
TA = -55°C
0
2.0
0.4
0.8
1.2
1.6
VGS, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
2.0
0.020
0.016
ID = 9.7A
0.012
ID = 4.5A
0.008
0.004
30
0.020
0
0
1
2
3
4
5
6
7
8
VGS, GATE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs. Gate Voltage
2.0
VGS= 4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCE INFORMATION
DMN1019UFDE
0.016
0.012
TA = 150°C
TA = 125°C
TA = 85°C
0.008
TA = 25°C
TA = -55°C
0.004
0
0
5
10
15
20
25
ID, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
30
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1.8
1.6
VGS = 4.5V
ID = 5A
1.4
1.2
VGS = 10V
ID = 10A
1.0
0.8
0.6
50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
July 2012
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
0.020
0.016
VGS = 4.5V
ID = 5A
0.012
0.008
VGS = 10 V
ID = 10A
0.004
1.0
0.8
0.6
ID = 1mA
0.4
ID = 250µA
0.2
0
-50
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
10,000
30
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
IS, SOURCE CURRENT (V)
25
20
15
10
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
Ciss
1,000
T A = 25°C
5
1.2
Coss
C rss
100
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
12
8
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN1019UFDE
VDS = -4V
ID = -10A
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
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DMN1019UFDE
ADVANCE INFORMATION
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63 0.60
A1
0
0.05 0.03
A3
—
—
0.15
b
0.25
0.35 0.30
b1
0.185 0.285 0.235
D
1.95
2.05 2.00
D2
0.85
1.05 0.95
E
1.95
2.05 2.00
E2
1.40
1.60 1.50
e
—
—
0.65
L
0.25
0.35 0.30
L1
0.82
0.92 0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Suggested Pad Layout
Dimensions
Y3 Y2
X2
Y1
X1
X (6x)
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
C
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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DMN1019UFDE
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
7 of 7
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July 2012
© Diodes Incorporated