DIODES DMP21D0UFB4-7B

A Product Line of
Diodes Incorporated
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
Features and Benefits
RDS(on)
ID @ TA = 25°C
495mΩ @ VGS = -4.5V
-0.77A
690mΩ @ VGS = -2.5V
-0.67A
960mΩ @ VGS = -1.8V
-0.57A
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Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
2
Footprint of just 0.6mm – thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 3KV
Qualified to AEC-Q101 Standards for High Reliability
Portable electronics
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Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
DFN1006H4-3
S
Gate
D
G
Top View
Internal Schematic
Bottom View
ESD PROTECTED TO 3kV
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Notes:
Marking
NO
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP21D0UFB4-7B
NO
NO = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
1 of 6
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June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current (Note 6)
Thermal Characteristics
Value
-20
±8
Unit
V
V
ID
-0.77
-0.55
-1.17
A
IDM
-5.0
A
Value
0.43
0.99
293
126
-55 to +150
Unit
W
W
°C/W
°C/W
°C
TA = 25°C (Note 4)
TA = 85°C (Note 4)
TA = 25°C (Note 5)
Steady
State
Continuous Drain Current
Symbol
VDSS
VGSS
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Thermal Characteristics
10
P(pk), PEAK TRANSIENT POWER (W)
9
Single Pulse
RθJA = 120°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
8
7
6
5
4
3
2
1
0
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (SEC)
Fig. 1 Single Pulse Maximum Power Dissipation
100
1,000
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 120°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 2 Transient Thermal Response
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10
100
1,000
June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
-1
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-
-0.7
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
50
-
-
495
690
960
-1.2
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -400mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -100mA
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
80
15.5
10.4
599.2
1.54
0.91
0.14
0.24
6.7
9.2
49.2
34.5
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
-
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -15V, ID = -1A
VGS = -4.5V, VDS = -15V,
ID = -1A
VDS = -10V, -ID = 1A
VGS = -4.5V, RG = 6Ω
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
2.0
2.0
VGS = -4.5V
VGS = -4.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -3.0V
VGS = -2.5V
1.5
VGS = -2.0V
1.0
VGS = -1.8V
0.5
VGS = -1.5V
1.5
VDS = -5V
1.0
0.5
TA = 150°C
T A = 125°C
VGS = -1.2V
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
0
5
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TA = 85°C
TA = 25°C
T A = -55°C
0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
3.0
June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
1.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMP21D0UFB4
0.9
0.8
0.7
0.6
VGS = -1.8V
0.5
0.4
VGS = -2.5V
0.3
VGS = -4.5V
0.2
0.1
0
0
0.4
0.8
1.2
1.6
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.7
1.5
1.3
1.1
VGS = -5.0V
ID = -500mA
0.9
VGS = -2.5V
ID = -250mA
0.7
0.5
-50
VGS = -4.5V
0.6
0.5
T A = 150°C
0.4
TA = 125°C
TA = 85°C
0.3
TA = 25°C
0.2
T A = -55°C
0.1
0
0
0.4
0.8
1.2
1.6
-ID, DRAIN CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
2.0
0.8
0.7
0.6
VGS = -2.5V
ID = -250mA
0.5
0.4
0.3
VGS = -5.0V
ID = -500mA
0.2
0.1
0
-50
2.0
1.4
1.8
1.2
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.7
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 On-Resistance Variation with Temperature
1.0
ID = -1mA
0.8
0.6
0.8
ID = -250µA
0.4
1.6
1.4
1.2
T A = 25°C
1.0
0.8
0.6
0.4
0.2
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
4 of 6
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0
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
100,000
IGSS, LEAKAGE CURRENT (nA)
-IDSS, LEAKAGE CURRENT (nA)
10,000
1,000
TA = 150°C
TA = 125°C
100
T A = 85°C
10
10,000
TA = 25°C
1
0
TA = 125°C
1,000
100
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
T A = 85°C
T A = 25°C
10
TA = -55°C
1
0.1
0
4
T A = 150°C
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
IGSS, LEAKAGE CURRENT (nA)
100,000
10,000
TA = 150°C
TA = 125°C
1,000
100
TA = 85°C
TA = 25°C
10
T A = -55°C
1
0.1
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.13 Leakage Current vs. Gate-Source Voltage
Package Outline Dimensions
A
A1
D
b1
E
e
b2
L2
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
L3
DFN1006H4-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.02
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L1
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DMP21D0UFB4
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
G1
Y
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
6 of 6
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June 2011
© Diodes Incorporated