DIODES DMG3415UQ-7

DMG3415U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
-20V
42.5mΩ @ VGS = -4.5V
71mΩ @ VGS = -1.8V
Features
•
•
•
•
•
•
•
•
ID
TA = 25°C
-4.0A
-2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
•
•
DC-DC Converters
Power management functions
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
G
ESD PROTECTED TO 3kV
Top View
S
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG3415U-7
DMG3415UQ-7
DMG3415U-13
Notes:
Qualification
Commercial
Automotive
Commercial
Case
SOT23
SOT23
SOT23
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
34P
YW
Marking Information
34P = Product Type Marking Code
YW = Date Code Marking
Y = Year (ex: W = 2009)
W = Week (ex: A ~ Z = Weeks 1 ~ 26
a ~ y = Weeks 27 ~ 51
z = Weeks 52 and 53)
DMG3415U-7
DMG3415U
Document number: DS31735 Rev. 9 - 2
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© Diodes Incorporated
DMG3415U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Units
V
V
IDM
Value
-20
±8
-4.0
-3.5
-30
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
0.9
139
32
-55 to +150
Units
W
°C/W
°C/W
°C
TA = +25°C
TA = +70°C
Steady
State
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to case (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1
±10
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
-0.3
⎯
⎯
⎯
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
−0.55
31
40
51
3
-1.0
42.5
53
71
⎯
294
104
25
250
⎯
⎯
⎯
9.1
1.5
1.7
71
117
795
393
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Notes:
Ciss
Coss
Crss
Rg
⎯
⎯
⎯
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
µA
V
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8.0V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -4A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V
ID = -4A
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω, ID = -1A
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
.
DMG3415U
Document number: DS31735 Rev. 9 - 2
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October 2012
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DMG3415U
20
VGS = 2.5V
16
16
VGS = 2.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
20
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
12
8
VGS = 1.5V
VDS = 5V
12
8
T A = 150°C
4
4
TA = 125°C
TA = 85°C
TA = 25°C
0
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0.07
0.06
0.05
VGS = 2.5V
0.04
VGS = 4.5V
0.03
0.02
0.01
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5A
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Document number: DS31735 Rev. 9 - 2
VGS = 4.5V
0.06
TA = 150°C
0.05
TA = 125°C
0.04
TA = 85°C
TA = 25°C
0.03
TA = -55°C
0.02
0.01
0
4
8
12
16
ID, DRAIN CURRENT (A)
20
0.08
0.07
0.06
VGS = 2.5V
ID = 5A
0.05
0.04
0.03
VGS = 4.5V
ID = 10A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
DMG3415U
0.07
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
0.6
-50
2.5
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.4
0.8
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
0.08
20
1.6
1.0
0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1
0.08
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T A = -55°C
0
0
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DMG3415U
20
18
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
0.9
ID = 1mA
0.6
ID = 250µA
0.3
14
12
10
TA = 25°C
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
IDSS, LEAKAGE CURRENT (nA)
100,000
10,000
TA = 150°C
TA = 125°C
1,000
T A = 85°C
100
10
TA = 25°C
TA = -55°C
1
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 171°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMG3415U
Document number: DS31735 Rev. 9 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
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10
100
1,000
October 2012
© Diodes Incorporated
DMG3415U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
K1
D
J
F
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMG3415U
Document number: DS31735 Rev. 9 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DMG3415U
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMG3415U
Document number: DS31735 Rev. 9 - 2
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