DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) ESD Protected MOSFET Gate up to 2kV "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) SOT-363 D2 B E Q1 S2 ESD protected gate up to 2kV Q2 G2 C TOP VIEW TOP VIEW Internal Schematic Maximum Ratings – MOSFET, Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) @TA = 25°C unless otherwise specified Continuous Symbol VDSS VGSS ID IDM Value 50 ±12 160 560 Units V V mA mA Value -50 -45 -5.0 -100 Unit V V V mA Value 250 500 -55 to +150 Unit mW °C/W °C Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Characteristics, Total Device Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: Symbol VCBO VCEO VEBO IC @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMB54D0UDW Document number: DS31677 Rev. 4 - 2 1 of 7 www.diodes.com December 2009 © Diodes Incorporated DMB54D0UDW Electrical Characteristics - MOSFET Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 10 V μA IGSS ⎯ ⎯ 1.0 μA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.7 ⎯ ⎯ 0.8 3.1 4 1.0 4 5 Gate-Body Leakage 5.0 V Ω Forward Transconductance gFS 180 ⎯ ⎯ mS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss ⎯ ⎯ ⎯ 25 5 2.1 ⎯ ⎯ ⎯ pF pF pF Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz Electrical Characteristics - PNP Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage (Note 4) Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage (Note 4) DC Current Gain (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min -50 -45 -5 220 Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) — Base-Emitter Saturation Voltage (Note 4) VBE(SAT) Base-Emitter Voltage (Note 4) VBE(ON) Collector-Cutoff Current (Note 4) Collector-Emitter Cut-Off Current Gain Bandwidth Product Output Capacitance Noise Figure Notes: Typ — — — 290 — — Max — — — 475 -100 -400 — — -700 -900 — — mV -600 — — — -750 -820 mV ICES fT COB — — — 100 — — — — — — -15 -4.0 -100 — 4.5 nA µA nA MHz pF NF — — 10 dB ICBO (Note 4) Unit V V V — mV Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -45V VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz 4. Short duration pulse test used to minimize self-heating effect. DMB54D0UDW Document number: DS31677 Rev. 4 - 2 2 of 7 www.diodes.com December 2009 © Diodes Incorporated DMB54D0UDW MOSFET 0.8 0.5 VGS = 10V 0.7 VDS = 10V 0.4 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 0.6 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 TA = 85°C TA = 25°C TA = -55°C 0.3 T A = 150°C TA = 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 5 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 4 Fig. 2 Typical Transfer Characteristics 10 2.0 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 35 1.8 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1 2 3 VGS, GATE SOURCE VOLTAGE (V) VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 Ciss 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 Document number: DS31677 Rev. 4 - 2 Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMB54D0UDW Coss 3 of 7 www.diodes.com 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 December 2009 © Diodes Incorporated DMB54D0UDW MOSFET (continued) 1 1.0 0.9 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.1 ID = 250µA 0.8 0.7 0.1 TA = 150°C 0.01 TA = 125°C TA = 85°C 0.001 TA = 25°C T A = -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.0001 0.1 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RθJA = 500°C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9 Derating Curve - Total Package Power Dissipation DMB54D0UDW Document number: DS31677 Rev. 4 - 2 4 of 7 www.diodes.com December 2009 © Diodes Incorporated DMB54D0UDW PNP Transistor 0.5 TA = 150°C VCE = 5V IC IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 T A = 25°C TA = -50°C 10 0.4 0.3 TA = 25°C 0.2 T A = 150°C 0.1 T A = -50°C 0 0.1 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 1,000 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 11 Collector-Emitter Saturation Voltage vs. Collector Current 1,000 ft, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current 1 Ordering Information (Note 5) Part Number DMB54D0UDW-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. MB2 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMB54D0UDW Document number: DS31677 Rev. 4 - 2 Mar 3 YM Marking Information 2010 X Apr 4 MB2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 5 of 7 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D December 2009 © Diodes Incorporated DMB54D0UDW Package Outline Dimensions A B C H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMB54D0UDW Document number: DS31677 Rev. 4 - 2 6 of 7 www.diodes.com December 2009 © Diodes Incorporated DMB54D0UDW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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