DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.001 grams (approximate) • • • • • • DFN1006H4-3 Drain Body Diode S Gate D Gate Protection Diode BOTTOM VIEW ESD PROTECTED Maximum Ratings Equivalent Circuit TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current Thermal Characteristics TP = 10µs Symbol VDSS VGSS ID IDM Value 20 ±10 230 805 Unit V V mA mA 350 357 mW °C/W -55 to +150 °C @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: G Source PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN26D0UFB4 Document number: DS31775 Rev. 5 - 2 1 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN26D0UFB4 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS 20 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 500 ±1 ±100 μA nA VGS(th) 0.6 ⎯ 0.9 V RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 1.8 2.4 2.9 3.7 5.4 3.0 4.0 6.0 10.0 15.0 Ω |Yfs| VSD 100 0.5 242 ⎯ ⎯ 1.4 mS V Ciss Coss Crss ⎯ ⎯ ⎯ 14.1 2.9 1.6 ⎯ ⎯ ⎯ pF pF pF VDS = 15V, VGS = 0V f = 1.0MHz TON TOFF ⎯ ⎯ 12 29 ⎯ ⎯ ns VGS = 4.5V, VDD = 10V ID = 200mA, RG = 2.0Ω VGS = 0V, ID = 100μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VGS = 1.2V, ID = 1mA VDS =10V, ID = 0.1A VGS = 0V, IS = 115mA 4. Short duration pulse test used to minimize self-heating effect. 0.4 0.8 VGS = 8V VDS = 10V VGS = 4.5V 0.6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.7 VGS = 3.0V 0.5 0.4 VGS = 2.5V 0.3 VGS = 2.0V 0.2 0.1 0 0 0.3 TA = -55°C TA = 25°C TA = 85°C TA = 125°C 0.2 TA = 150°C 0.1 VGS = 1.5V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN26D0UFB4 Document number: DS31775 Rev. 5 - 2 3 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 July 2010 © Diodes Incorporated 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN26D0UFB4 4 3 VGS = 1.8V 2 VGS = 2.5V VGS = 4.5V 1 0.01 0.1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.0 3 TA = 150°C 2 TA = 125°C T A = 85°C TA = 25°C 1 TA = -55°C 0 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 3.5 1.6 VGS = 4.5V ID = 500mA RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 4.0 1.8 1.4 VGS = 2.5V ID = 150mA 1.2 1.0 0.8 3.0 2.5 VGS = 2.5V ID = 150mA 2.0 1.5 VGS = 4.5V ID = 500mA 1.0 0.6 0.4 -50 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.4 0.8 1.2 0.7 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 0.2 Document number: DS31775 Rev. 5 - 2 0.6 TA = 25°C 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN26D0UFB4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 4 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current July 2010 © Diodes Incorporated DMN26D0UFB4 10,000 20 IDSS, LEAKAGE CURRENT (nA) f = 1MHz C, CAPACITANCE (pF) 15 Ciss 10 5 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 1 TA = 25°C Coss TA = -55°C Crss 0 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.1 0 20 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 278°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 10 100 1,000 Ordering Information (Note 5) Part Number DMN26D0UFB4-7 Notes: Case DFN1006H4-3 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information M1 DMN26D0UFB4 Document number: DS31775 Rev. 5 - 2 M1 = Product Type Marking Code 4 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN26D0UFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN26D0UFB4 Document number: DS31775 Rev. 5 - 2 5 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN26D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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