DIODES ZX5T2E6TC

ZX5T2E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BVCEO = -20V : RSAT = 31m ; IC = -3.5A
DESCRIPTION
Pac k aged in t he SOT2 3 -6 out line t his new 5 t h
generation low saturation 20V PNP transistor offers
extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power
management functions.
FEATURES
SOT23-6
• 3.5 Amps continuous current
• Extremely low saturation voltage (-70mV max @ 1A/100mA )
• Up to 10 Amps peak current
• Very low saturation voltages
APPLICATIONS
• DC - DC converters
• Battery charging
• Power switches
• Motor control
• Power management functions
PINOUT
ORDERING INFORMATION
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
ZX5 T2 E6 TA
7”
8mm embossed
3,000
ZX5 T2 E6 TC
13”
8mm embossed
10,000
DEVICE
DEVICE MARKING
• 52
TOP VIEW
ISSUE 1 - MAY 2004
1
SEMICONDUCTORS
ZX5T2E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
-25
Collector-emitter voltage
BV CEO
-20
V
Emitter-base voltage
BV EBO
-7.5
V
Continuous collector current
IC
-3.5
A
Peak pulse current
I CM
-10
A
Power dissipation at T A = 2 5 ° C (a)
Linear derating factor
PD
1.1
W
8.8
mW/° C
(b)
PD
Power dissipation at T A = 2 5 ° C
1.7
W
13.6
mW/° C
-55 to + 150
°C
VALUE
UNIT
R⍜JA
113
° C/W
R⍜JC
73
° C/W
Linear derating factor
Operating and storage temperature range
T j, T stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
Junction to ambient
Junction to ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t< 5 seconds.
ISSUE 1 - MAY 2004
SEMICONDUCTORS
2
ZX5T2E6
CHARACTERISTICS
ISSUE 1 - MAY 2004
3
SEMICONDUCTORS
ZX5T2E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV CBO
MIN.
TYP.
-25
-49
MAX.
UNIT CONDITIONS
V
I C = -1 0 0 ␮A
Collector-emitter breakdown voltage
BV CEO
-20
-43
V
I C = -1 0 mA *
Emitter-base breakdown voltage
BV EBO
-7.5
-8.4
V
I E = -1 0 0 ␮A
Collector cut-off current
I CBO
-100
nA
V CB = -2 0 V
Collector cut-off current
I CES
-100
nA
V CB = -2 0 V
Emitter cut-off current
I EBO
-100
nA
V EB = -6 V
Collector-emitter saturation voltage
V CE(SAT)
-10
-15
mV
-100
-140
mV
I C = -0 . 1 A, I B = -1 0 mA*
I C = -1 A, I B = -1 0 mA*
-110
-130
mV
IC = -3 .5 A, IB = -3 5 0 mA*
Base-emitter saturation voltage
V BE(SAT)
-0.96
-1.1
V
IC = -3 .5 A, IB = -3 5 0 mA*
Base-emitter turn-on voltage
V BE(ON)
-0.8
-0.9
V
Static forward current transfer ratio
hFE
I C = -3 . 5 A, V CE = -2 V *
I C = -1 0 mA, V CE = -2 V *
300
575
300
450
150
285
I C = -1 A, V CE = -2 V *
I C = -3 . 5 A, V CE = -2 V *
40
I C = -1 0 A, V CE = -2 V *
10
Transition frequency
900
110
fT
I C = -5 0 mA, V CE = -1 0 V
f = 5 0 MHz
45
pF
V CB = -1 0 V , f = 1 MHz *
t ON
90
ns
I C = -2 A, V CC = -1 0 V ,
t OFF
325
ns
I B1 = I B2 = -4 0 mA
Output capacitance
C OBO
Switching times
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2% .
ISSUE 1 - MAY 2004
SEMICONDUCTORS
4
ZX5T2E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2004
5
SEMICONDUCTORS
ZX5T2E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters
Min
Inches
Max
Min
Max
DIM
Millimeters
Min
Inches
Max
Min
Max
A
0.90
1.45
0.035
0.057
E
2.20
3.20
0.0866
0.118
A1
0.00
0.15
0.00
0.006
E1
1.30
1.80
0.0511
0.071
A2
0.90
1.30
0.035
0.051
L
0.10
0.60
0.004
0.024
b
0.20
0.50
0.008
0.020
e
0.95 REF
0.037 REF
C
0.09
0.26
0.003
0.010
e1
1.90 REF
0.075 REF
D
2.70
3.10
0.106
0.122
⍜
0°
30°
0°
30°
©Zetex Semiconductors plc 2004
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ISSUE 1 - MAY 2004
SEMICONDUCTORS
6
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