DIODES ZX5T955GTA

ZX5T955G
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
IN SOT223
SUMMARY
BVCEO = -140V : RSAT = 92m ; IC = -4A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 140V
PNP transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
SOT223
• 4 amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T955GTA
7”
13"
12mm
embossed
1000 units
ZX5T955GTC
4000 units
DEVICE MARKING
• X5T955
TOP VIEW
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ZX5T955G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
-180
Collector-emitter voltage
BV CEO
-140
V
Emitter-base voltage
BV EBO
-7
V
Continuous collector current (a)
IC
-4
A
Peak pulse current
I CM
-10
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to 150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
42
°C/W
Junction to ambient (b)
R ⍜JA
78
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZX5T955G
CHARACTERISTICS
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ZX5T955G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-180
-200
V
I C =-100␮A
Collector-emitter breakdown voltage
BV CER
-180
-200
V
I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
-140
-160
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7.0
-8.0
V
I E =-100␮A
Collector cut-off current
I CBO
-20
nA
V CB =-150V
-0.5
␮A
VCB=-150V, Tamb=100⬚C
-20
nA
V CB =-150V
-0.5
␮A
VCB=-150V, Tamb=100⬚C
V EB =-6V
Collector cut-off current
MAX. UNIT CONDITIONS
⬍1
⬍1
I CER
Rⱕ1k⍀
Emitter cut-off current
I EBO
⬍1
-10
nA
Collector-emitter saturation voltage
V CE(SAT)
-40
-60
mV
I C =-0.1A, I B =-5mA*
-55
-80
mV
IC=-0.5A, IB=-50mA*
-85
-120
mV
IC=-1A, IB=-100mA*
-275
-360
mV
IC=-3A, IB=-300mA*
Base-emitter saturation voltage
V BE(SAT)
-940
-1040
mV
I C =-3A, I B =-300mA*
Base-emitter turn-on voltage
V BE(ON)
-830
-930
mV
I C =-3A, V CE =-5V*
Static forward current transfer ratio
H FE
Transition frequency
fT
Output capacitance
C OBO
100
225
100
200
45
100
IC=-3A, VCE=-5V*
5
IC=-10A, VCE=-5V*
120
I C =-10mA, V CE =-5V*
IC=-1A, VCE=-5V*
300
MHz IC =-100mA, VCE =-10V
f=50MHz
Switching times
33
pF
V CB =-10V, f=1MHz*
t ON
42
ns
t OFF
636
I C =-1A, V CC =-50V,
I B1 = -I B2 =-100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
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ZX5T955G
TYPICAL CHARACTERISTICS
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ZX5T955G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex plc 2003
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