DIODES ZXTN2005GTC

ZXTN2005G
25V NPN LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 25V : RSAT = 30m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 25V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• Extemely low equivalent on-resistance; RSAT = 30m at 6.5A
SOT223
• 7 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2005GTA
7”
13”
12mm
embossed
1,000 units
ZXTN2005GTC
4,000 units
DEVICE MARKING
TOP VIEW
ZXTN
2005
ISSUE 3 - MAY 2006
1
SEMICONDUCTORS
ZXTN2005G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
60
V
Collector-emitter voltage
BV CEO
25
V
Emitter-base voltage
BV EBO
7
V
A
Continuous collector current
IC
7
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient
(a)
Junction to ambient
(b)
VALUE
UNIT
R ⍜JA
42
°C/W
R ⍜JA
78
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 3 - MAY 2006
SEMICONDUCTORS
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ZXTN2005G
CHARACTERISTICS
ISSUE 3 - MAY 2006
3
SEMICONDUCTORS
ZXTN2005G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Collector-base breakdown voltage
BV CBO
60
120
V
I C =100␮A
Collector-emitter breakdown voltage
BV CER
60
120
V
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
25
35
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
50
nA
V CB =50V
0.5
␮A
VCB=50V, Tamb=100⬚C
Collector cut-off current
I CER
100
nA
V CB =50V
Rⱕ1k⍀
0.5
␮A
VCB=50V, Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
h FE
Transition frequency
10
nA
28
40
mV
I C =500mA, I B =10mA*
35
50
mV
IC=1A, IB=100mA*
55
75
mV
IC=1A, IB=10mA*
115
140
mV
IC=2A, IB=10mA*
195
230
mV
IC=6.5A, IB=150mA*
980
1080
mV
I C =6.5A, I B =150mA*
890
980
mV
300
400
I C =6.5A, V CE =1V*
I C =10mA, V CE =1V*
300
450
IC=1A, VCE=1V*
200
275
IC=7A, VCE=1V*
40
55
IC=20A, VCE=1V*
150
fT
I C =100mA, VCE =10V
f=50MHz
Output capacitance
C OBO
48
pF
V CB =10V, f=1MHz*
Switching times
t ON
33
ns
t OFF
464
I C =1A, V CC =10V,
I B1 =-I B2 =100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ISSUE 3 - MAY 2006
SEMICONDUCTORS
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ZXTN2005G
TYPICAL CHARACTERISTICS
ISSUE 3 - MAY 2006
5
SEMICONDUCTORS
ZXTN2005G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 3 - MAY 2006
SEMICONDUCTORS
6