DIODES ZXTN2010GTC

ZXTN2010G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 60V : RSAT = 35m ; IC = 6A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 35mV at 6A
SOT223
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC Modules
• Backlight Inverters
PINOUT
ORDERING INFORMATION
DEVICE
ZXTN2010GTA
ZXTN2010GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
QUANTITY PER
REEL
12mm
1000 units
embossed
4000 units
TOP VIEW
DEVICE MARKING
ZXTN
2010
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2010G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-base voltage
BV CBO
150
V
Collector-emitter voltage
BV CEO
60
V
BV EBO
7
V
A
Emitter-base voltage
(a)
LIMIT
UNIT
IC
6
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
Continuous collector current
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R ⍜JA
VALUE
UNIT
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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SEMICONDUCTORS
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ZXTN2010G
CHARACTERISTICS
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SEMICONDUCTORS
ZXTN2010G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Collector-base breakdown voltage
BV CBO
150
190
V
I C =100␮A
Collector-emitter breakdown voltage
BV CER
150
190
V
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
60
80
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
50
nA
V CB =120V
0.5
␮A
VCB=120V,Tamb=100⬚C
Collector cut-off current
I CER
100
nA
V CB =120V
R ⱕ 1k⍀
0.5
␮A
VCB=120V,Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
H FE
10
nA
20
30
mV
I C =100mA, I B =5mA*
45
60
mV
IC=1A, IB=100mA*
50
70
mV
IC=1A, IB=50mA*
100
135
mV
IC=2A, IB=50mA*
210
260
mV
IC=6A, IB=300mA*
1000
1100
mV
I C =6A, I B =300mA*
940
1050
mV
I C =6A, V CE =1V*
I C =10mA, V CE =1V*
100
200
100
200
55
105
20
40
130
IC=2A, VCE=1V*
300
IC=5A, VCE=1V*
IC=10A, VCE=1V*
MHz I C =100mA, V CE =10V
Transition frequency
fT
Output capacitance
C OBO
31
pF
V CB =10A, f=1MHz*
Switching times
t ON
42
ns
t OFF
760
I C =1A, V CC =10V,
I B1 =I B2 =100mA
f=50MHz
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
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SEMICONDUCTORS
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ZXTN2010G
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2010G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
A
-
1.80
-
0.071
e
Min
2.30 BSC
Max
Min
0.0905 BSC
Max
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 2 - MAY 2006
SEMICONDUCTORS
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