DST3946DPJ COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) • • • SOT-963 6 5 Q2 Q1 1 Top View Ordering Information 2 3 Device Schematic (Note 5) Device DST3946DPJ-7 Notes: 4 Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information T9 DST3946DPJ Document number: DS32040 Rev. 1 - 2 T9 = Product Type Marking Code 1 of 9 www.diodes.com January 2010 © Diodes Incorporated DST3946DPJ Maximum Ratings - NPN (Q1) @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Maximum Ratings - PNP (Q2) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout. DST3946DPJ Document number: DS32040 Rev. 1 - 2 2 of 9 www.diodes.com January 2010 © Diodes Incorporated DST3946DPJ r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 370°C/W D = 0.9 D = 0.05 P(pk) D = 0.02 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 0.4 1,000 Single Pulse PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) 10 RθJA(t) = r(t) * RθJA RθJA = 370°C/W 100 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 10 1 0.3 Note 3 0.2 0.1 0 0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST3946DPJ Document number: DS32040 Rev. 1 - 2 3 of 9 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature January 2010 © Diodes Incorporated DST3946DPJ Electrical Characteristics - NPN (Q1) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 1.0 0.5 100 1.0 4.0 8.5 10 8.0 400 40 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: ⎯ Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4. Short duration pulse test used to minimize self-heating effect. 0.14 400 IB = 2mA IB = 1.6mA IB = 1.8mA VCE = 5V T A = 150°C IB = 1.4mA IB = 1.2mA 0.10 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.12 IB = 1mA 0.08 IB = 0.8mA IB = 0.6mA 0.06 IB = 0.4mA 0.04 300 T A = 125°C TA = 85°C 200 100 T A = 25°C TA = -55°C IB = 0.2mA 0.02 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DST3946DPJ Document number: DS32040 Rev. 1 - 2 4 of 9 www.diodes.com 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current January 2010 © Diodes Incorporated DST3946DPJ 1 1 IC/IB = 20 0.1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 T A = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0.01 0.1 VCE = 5V 0.9 TA = -55°C 0.8 0.7 TA = 25°C 0.6 TA = 150°C 0.5 TA = 125°C 0.4 0.3 0.1 TA = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current T A = 85°C T A = -55°C TA = 25°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 TA = 125°C 0.1 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current s 1.1 T A = 150°C 1.2 Gain = 10 1.0 0.8 0.6 TA = -55°C TA = 25°C TA = 150°C 0.4 0.2 0.1 TA = 125°C T A = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 IC, COLLECTOR CURRENT (A) TA = 25°C Single, Non-Repetitive Pulse 1 PW = 1ms DC 0.1 PW = 100µs PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (NPN) DST3946DPJ Document number: DS32040 Rev. 1 - 2 5 of 9 www.diodes.com January 2010 © Diodes Incorporated DST3946DPJ Electrical Characteristics - PNP (Q2) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO IBL -40 -40 -5.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -50 -50 -50 V V V nA nA nA hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 2.0 0.1 100 3.0 4.5 10 12 10 400 60 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 225 75 ns ns ns ns Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: ⎯ Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, IE = 0 VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4. Short duration pulse test used to minimize self-heating effect. 0.20 400 IB = -2mA 0.16 IB = -1.8mA VCE = 5V 350 TA = 150°C IB = -1.4mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA IB = -1.2mA 0.12 IB = -1mA IB = -0.8mA 0.08 IB = -0.6mA IB = -0.4mA 300 TA = 125°C 250 TA = 85°C 200 T A = 25°C 150 100 TA = -55°C 0.04 IB = -0.2mA 0 0 50 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 11 Typical Collector Current vs. Collector-Emitter Voltage DST3946DPJ Document number: DS32040 Rev. 1 - 2 6 of 9 www.diodes.com 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 12 Typical DC Current Gain vs. Collector Current January 2010 © Diodes Incorporated DST3946DPJ 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 T A = 150°C 0.1 T A = 125°C TA = 85°C T A = 25°C TA = -55°C 0.8 TA = -55°C T A = 25°C 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Saturation Voltage vs. Collector Current -IC, COLLECTOR CURRENT (A) 10 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 TA = 85°C T A = 25°C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 Gain = 10 T A = 125°C 0.01 0.1 0.01 1.2 T A = 150°C 0.1 1.2 Gain = 10 1.0 0.8 TA = -55°C T A = 25°C 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 16 Typical Base-Emitter Saturation Voltage vs. Collector Current TA = 25°C Single, Non-Repetitive Pulse 1 PW = 1ms DC 0.1 PW = 100µs PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 -VCE, COLLECTOR EMITTER CURRENT (V) Fig. 17 Safe Operation Area (PNP) DST3946DPJ Document number: DS32040 Rev. 1 - 2 7 of 9 www.diodes.com January 2010 © Diodes Incorporated DST3946DPJ Package Outline Dimensions D e1 SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm L E E1 e c b (6 places) A A1 Suggested Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST3946DPJ Document number: DS32040 Rev. 1 - 2 8 of 9 www.diodes.com January 2010 © Diodes Incorporated DST3946DPJ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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