ONSEMI NTJD2152P

NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
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Features
•
•
•
•
•
Leading –8 V Trench for Low RDS(ON) Performance
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC−70−6
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
V(BR)DSS
RDS(on) TYP
0.22 @ −4.5 V
0.32 @ −2.5 V
−8 V
SOT−363
SC−88 (6 LEADS)
Load Power switching
DC−DC Conversion
Li−Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−0.775
A
TA = 25 °C
Continuous Drain
Current
(Based on RJA)
Steady
State
Power Dissipation
(Based on RJA)
Steady
State
TA = 25 °C
Continuous Drain
Current
(Based on RJL)
Steady
State
TA = 25 °C
Power Dissipation
(Based on RJL)
Steady
State
TA = 85 °C
PD
W
0.27
0.14
ID
−0.8
TA = 25 °C
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
TA = 85 °C
0.29
t ≤10 s
IDM
±1.2
A
TJ,
TSTG
−55 to
150
°C
IS
−0.775
TL
260
Continuous Source Current (Body Diode)
MARKING DIAGRAM
6
TAD
SC−88 (SOT−363)
CASE 419B
Style 26
W
0.55
PD
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
1
A
−1.1
TA = 85 °C
Operating Junction and Storage Temperature
S1
−0.558
TA = 85 °C
Pulsed Drain Current
−0.775 A
0.51 @ −1.8 V
Applications
•
•
•
•
ID Max
TA
D
= Device Code
= Date Code
PIN ASSIGNMENT
1
6
Source−1
Drain−1
A
Gate−1
Gate−2
°C
Drain−2
Source−2
Top View
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Typ
Max
Junction−to−Ambient – Steady State
RJA
400
460
Junction−to−Lead (Drain) – Steady State
RJL
194
226
Unit
ORDERING INFORMATION
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 2
1
Publication Order Number:
NTJD2152/D
NTJD2152P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 A
−8.0
−10.5
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
−6.0
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −6.4 V
1.0
A
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
10
A
VGS(TH)
VGS = VDS, ID = −250 A
−1.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
( )
Forward Transconductance
gFS
−0.45
−0.83
mV/ °C
2.2
VGS = −4.5 V, ID = −0.57 A
0.22
0.3
VGS = −2.5 V, ID = −0.48 A
0.32
0.46
VGS = −1.8 V, ID = −0.20 A
0.51
0.9
VGS = −4.0 V, ID = −0.57 A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = −8.0
80V
160
225
38
55
28
40
VGS = −4.5 V, VDS = −5.0 V,
ID = −0.6
06A
2.2
4.0
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.5
Gate−to−Drain Charge
QGD
0.5
pF
nC
0.1
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = −4.5 V, VDD = −4.0 V,
ID = −0.5
0 5 A,
A RG = 8
8.0
0
ns
13
23
td(OFF)
50
tf
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = −0.23
0 23 A
TJ = 25°C
0.76
TJ = 125°C
0.63
VGS = 0 V, dIS/dt = 100 A/s,
IS = −0.77 A
2. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
78
1.1
V
ns
NTJD2152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
2
4
6
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0
0.8
0.6
0.4
1
−ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.5
TJ = 125°C
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.4
1
0.8
0.6
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
300
TJ = 25°C
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −2.5 V
0.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.4
2.4
1.2
1
0.8
VGS = 0 V
240
Ciss
180
120
Coss
60
Crss
0.6
−50
−25
0
25
50
75
100
125
150
0
−8
−6
−4
−2
TJ, JUNCTION TEMPERATURE (°C)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
0
NTJD2152P
0.7
5
QG(TOT)
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = −0.6 A
TJ = 25°C
0
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD2152P
ORDERING INFORMATION
Package Type
Tape and Reel Size†
NTJD2152PT1
SOT−363
3000 / Tape & Reel
NTJD2152PT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT2
SOT−363
3000 / Tape & Reel
NTJD2152PT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD2152PT4
SOT−363
10,000 / Tape & Reel
NTJD2152PT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTJD2152P
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
SC−88/SC70−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
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For additional information, please contact your
local Sales Representative.
NTJD2152P/D