NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing (G Suffix) http://onsemi.com V(BR)DSS ID Max 1.0 @ 4.0 V Applications • • • • RDS(on) TYP 270 mA 30 V 1.5 @ 2.5 V Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts SC−70 SOT−323 (3 LEADS) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Gate Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 270 mA Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 330 mW t =10 µs IDM 200 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 270 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 1 3 Source 200 Drain 2 Top View MARKING DIAGRAM 3 1 TDW 2 SC−70 / SOT−323 CASE 419 STYLE 8 1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). TD W = Device Code = Work Week PIN ASSIGNMENT Gate 1 3 Source Drain 2 Top View ORDERING INFORMATION Device NTS4001NT1 NTS4001NT1G Semiconductor Components Industries, LLC, 2003 September, 2003 − Rev. 1 1 Package Shipping SC−70 3000 Units/Reel SC−70 (Pb−Free) 3000 Units/Reel Publication Order Number: NTS4001N/D NTS4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 µA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V mV/ °C 60 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 µA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 µA VGS(TH) VGS = VDS, ID = 100 µA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) ( ) 0.8 1.2 mV/ °C −3.4 VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.0 gFS VDS = 3.0 V, ID = 10 mA 80 Input Capacitance CISS 33 COSS VGS = 0 V, f = 1.0 MHz, VDS = 5 5.0 0V 20 Output Capacitance 19 32 Reverse Transfer Capacitance CRSS 7.25 12 0.9 1.3 Forward Transconductance Ω mS CHARGES AND CAPACITANCES VGS = 5.0 V, VDS = 24 V, ID = 0 0.1 1A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.2 pF nC 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA mA, RG = 50 Ω ns 17 23 td(OFF) 94 tf 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.43 VGS = 0 V, dIS/dt = 8.0 A/µs, IS = 10 mA 2. Pulse Test: pulse width ≤ 300 µs, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 5.0 0.7 V ns NTS4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.18 0.16 2.5 V 0.14 ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.1 TJ = 25°C 0.4 0.8 1.2 1.6 VDS = 5 V 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1.2 1.4 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 0.2 1.25 VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1.25 TJ = 25°C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5 0.25 0.005 0.205 10000 2 ID = 0.01 A VGS = 10 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.2 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTS4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C VGS = 0 V 20 Ciss Coss 10 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS QGD 2 1 ID = 0.1 A TJ = 25°C 0 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.6 0.2 0.4 0.8 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) 0.1 VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.75 1 NTS4001N PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 5 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 NTS4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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