Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at high current. • • • • • IGBT IN TO–220 20 A @ 90°C 31 A @ 25°C 600 VOLTS VERY LOW ON–VOLTAGE Industry Standard TO–220 Package High Speed Eoff: 63 J/A typical at 125°C Low On–Voltage – 1.7 V typical at 10 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes C G G C E CASE 221A–09 STYLE 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 31 20 62 Adc PD 112 0.89 Watts W/°C TJ, Tstg – 55 to 150 °C RθJC RθJA 1.12 65 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. REV 1 IGBT Motorola Motorola, Inc. 1998 Device Data 1 MGP20N60U ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — mV/°C 15 — — Vdc — — — — 10 200 — — 50 — — — 1.4 1.3 1.7 1.7 — 2.0 3.0 — 5.0 10 7.0 — mV/°C gfe — 7.0 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc µAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 5.0 Adc) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 10 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies — 1060 — Coes — 99 — Cres — 15 — td(on) — 43 — tr — 45 — td(off) — 144 — tf — 175 — Eoff — 340 — mJ td(on) — 43 — ns tr — 56 — td(off) — 235 — tf — 220 — Eoff — 625 — mJ QT — 57 — nC Q1 — 12 — Q2 — 25 — — 7.5 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 10 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 10 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, H, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 360 Vdc, Vdc IC = 10 Adc Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGP20N60U 60 60 17.5 V 12.5 V 15 V IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 17.5 V 50 20 V 40 30 20 VGE = 10 V 10 15 V 12.5 V 50 20 V 40 30 VGE = 10 V 20 10 TJ = 25°C TJ = 125°C 0 0 1 0 2 3 4 5 8 30 20 10 6 7 8 9 10 11 12 13 14 15 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 125°C 0 5 6 7 IC = 10 A 1.7 7.5 A 1.6 1.5 5.0 A 1.4 VGE = 15 V 80 mS PULSE WIDTH 1.3 –50 –25 25 0 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Junction Temperature VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ = 25°C VGE = 0 V 1600 Cies Coes 800 Cres 0 5 10 15 20 25 150 20 16 QT 12 Q1 Q2 8 TJ = 25°C VCC = 300 V IC = 10 A 4 0 0 20 40 60 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Total Charge Motorola IGBT Device Data 8 1.8 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 2400 C, CAPACITANCE (pF) 4 Figure 2. Output Characteristics 40 0 3 Figure 1. Output Characteristics VCE = 100 V 5.0 mS PULSE WIDTH 5 2 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TJ = 25°C 50 1 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (AMPS) 7 6 80 3 MGP20N60U 0.7 IC = 10 A Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 0.7 0.6 7.5 A 0.5 TJ = 125°C VDD = 360 V VGE = 15 V 0.4 5.0 A 0.3 0.2 5 15 25 35 45 5.0 A 0.4 0.3 0.2 0.1 –25 0 25 50 100 75 125 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Turn–Off Energy Losses versus Gate Resistance Figure 8. Turn–Off Energy Losses versus Junction Temperature 150 100 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 0.6 0.5 IC, COLLECTOR CURRENT (AMPS) Eoff , TURN–OFF ENERGY LOSSES (mJ) 7.5 A RG, GATE RESISTANCE (OHMS) 0.7 0.4 0.3 0.2 0.1 0 10 TJ = 125°C VGE = 15 V RG = 20 W 1 0 4 0.5 0 –50 55 IC = 10 A VCC = 360 V VGE = 15 V RG = 20 W 0.6 2.5 5 7.5 10 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 9. Turn–Off Energy Losses versus Collector Current Figure 10. Reverse Biased Safe Operating Area 1000 Motorola IGBT Device Data MGP20N60U PACKAGE DIMENSIONS –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–09 ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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