Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 20 A @ 90°C 32 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • Industry Standard High Power TO–247 Package with Isolated Mounting Hole • High Speed Eoff: 60 mJ per Amp typical at 125°C • High Short Circuit Capability – 10 ms minimum • Soft Recovery Free Wheeling Diode is included in the package • Robust High Voltage Termination • Robust RBSOA C G G C E E CASE 340F–03, Style 4 TO–247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) Rating VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 32 20 64 Adc PD 142 1.14 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJC RθJA 0.88 2.00 45 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. TMOS Motorola Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGW20N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — — — — — 100 2500 — — 250 — — — 2.30 2.20 2.85 2.85 — 3.65 4.0 — 6.0 10 8.0 — mV/°C gfe — 12 — Mhos Cies — 2280 — pF Coes — 165 — Cres — 12 — td(on) — 59 — OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 20 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time (VCC = 360 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 25°C) Energy losses include “tail” tr — 61 — td(off) — 150 — tf — 212 — Turn–Off Switching Loss Eoff — 0.60 0.85 Turn–On Switching Loss Eon — 0.75 — Total Switching Loss Ets — 1.35 — td(on) — 51 — tr — 77 — td(off) — 184 — tf — 392 — Turn–Off Switching Loss Eoff — 1.20 — Turn–On Switching Loss Eon — 1.50 — Total Switching Loss Ets — 2.70 — QT — 74 — Q1 — 19 — Q2 — 27 — — — — 1.50 1.30 1.70 1.90 — 2.15 Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VCC = 360 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 125°C) Energy losses include “tail” Fall Time Gate Charge (VCC = 360 Vdc, IC = 20 Adc, VGE = 15 Vdc) ns mJ ns mJ nC DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 10 Adc) (IEC = 10 Adc, TJ = 125°C) (IEC = 20 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 VFEC Vdc (continued) Motorola TMOS Power MOSFET Transistor Device Data MGW20N60D ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit trr — 117 — ns ta — 70 — tb — 47 — QRR — 1.2 — µC trr — 166 — ns ta — 98 — tb — 68 — QRR — 1.9 — — 13 — DIODE CHARACTERISTICS — continued Reverse Recovery Time (IF = 20 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 20 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge µC INTERNAL PACKAGE INDUCTANCE LE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) nH TYPICAL ELECTRICAL CHARACTERISTICS 60 60 12.5 V 15 V 40 10 V 20 0 2 0 6 4 IC, COLLECTOR CURRENT (AMPS) 15 V 40 10 V 20 0 2 4 6 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C VCE = 100 V 5 µs PULSE WIDTH 30 TJ = 125°C 20 25°C 10 5 12.5 V 17.5 V 0 8 40 0 VGE = 20 V TJ = 125°C IC, COLLECTOR CURRENT (AMPS) VGE = 20 V 17.5 V 6 7 8 9 10 11 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) TJ = 25°C 3.2 VGE = 15 V 80 µs PULSE WIDTH IC = 20 A 2.8 15 A 2.4 2 – 50 10 A 0 50 100 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature Motorola TMOS Power MOSFET Transistor Device Data 8 150 3 4000 VCE = 0 V VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) MGW20N60D TJ = 25°C C, CAPACITANCE (pF) 3200 Cies 2400 1600 Coes 800 Cres TOTAL SWITCHING ENERGY LOSSES (mJ) 5 15 10 20 QT 12 Q1 8 TJ = 25°C IC = 20 A 4 0 25 Q2 0 40 20 60 80 GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus Total Charge VCC = 360 V VGE = 15 V TJ = 125°C 3.2 TOTAL SWITCHING ENERGY LOSSES (mJ) 4 IC = 20 A 2.4 15 A 10 A 1.6 0.8 0 10 20 30 40 4 VCC = 360 V VGE = 15 V RG = 20 Ω 3.5 3 2.5 IC = 20 A 2 15 A 1.5 10 A 1 0.5 50 0 50 25 75 125 100 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Total Switching Losses versus Gate Resistance Figure 8. Total Switching Losses versus Junction Temperature 3 150 1.6 VCC = 360 V VGE = 15 V RG = 20 Ω TJ = 125°C 2.5 2 1.5 1 0.5 0 4 0 TURN–OFF ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) 0 16 0 5 10 15 20 VCC = 360 V VGE = 15 V TJ = 125°C IC = 20 A 1.2 15 A 0.8 10 A 0.4 10 20 30 40 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) Figure 9. Total Switching Losses versus Collector–to–Emitter Current Figure 10. Turn–Off Losses versus Gate Resistance 50 Motorola TMOS Power MOSFET Transistor Device Data MGW20N60D TURN–OFF ENERGY LOSSES (mJ) 1.5 1 IC = 20 A 15 A 10 A 0.5 0 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1.2 VCC = 360 V VGE = 15 V RG = 20 Ω 0 25 50 75 100 125 0 5 10 15 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) Figure 11. Turn–Off Losses versus Junction Temperature Figure 12. Turn–Off Losses versus Collector–to–Emitter Current 10 TJ = 125°C TJ = 25°C 1 0 0.4 TJ, JUNCTION TEMPERATURE (°C) 100 0.1 VCC = 360 V VGE = 15 V RG = 20 Ω TJ = 125°C 0.8 0 150 IC, COLLECTOR–TO–EMITTER CURRENT (A) TURN–OFF ENERGY LOSSES (mJ) 2 0.4 0.8 1.2 1.6 2 100 10 1 0.1 VGE = 15 V RGE = 20 Ω TJ = 125°C 1 10 100 VFM, FORWARD VOLTAGE DROP (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 13. Typical Diode Forward Drop versus Instantaneous Forward Current Figure 14. Reverse Biased Safe Operating Area Motorola TMOS Power MOSFET Transistor Device Data 20 1000 5 MGW20N60D PACKAGE DIMENSIONS 0.25 (0.010) M –T– –Q– T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E –B– C 4 U A R 1 K L 2 3 –Y– P F H V J D 0.25 (0.010) M Y Q G S DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 GATE COLLECTOR EMITTER COLLECTOR CASE 340F–03 TO–247AE ISSUE E Motorola reserves the right to make changes without further notice to any products herein. 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