ON Semiconductor NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100–120 VOLTS 125 WATTS HFE = 1000 (min.) @ 5 Adc Monolithic Construction with Built–in Base Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous — Peak IC 10 20 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 1.0 Watts W/C –65 to +150 C Collector–Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg CASE 340D–02 SOT 93, TO–218 TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 1.0 C/W Thermal Resistance, Junction to Case 1.0 DERATING FACTOR 0.8 0.6 0.4 0.2 0 0 25 75 50 100 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 10 1 Publication Order Number: BDV65B/D BDV65B BDV64B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO — 1.0 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 0.4 mAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0, TC = 150C) ICBO — 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 5.0 mAdc hFE 1000 — — Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.02 Adc) VCE(sat) — 2.0 Vdc Base–Emitter Saturation Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.5 Vdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K 1K 4 0.1 1 IC, COLLECTOR CURRENT (A) 1K 1 10 0.1 Figure 2. DC Current Gain 1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain http://onsemi.com 2 10 BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V, VOLTAGE (V) V, VOLTAGE (V) 10 0.1 10 1 IC, COLLECTOR CURRENT (A) 0.1 1 VBE(sat) @ IC/IB = 250 0.1 1 IC, COLLECTOR CURRENT (A) Figure 4. “On” Voltages 100 IC, COLLECTOR CURRENT (A) Figure 5. “On” Voltages There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150C, TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 50 20 10 dc 5 5.0 ms 1.0 ms SECONDARY BREAKDOWN LIMITED @ TJ 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B, BDV64B 10 50 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1 10 100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. Active Region Safe Operating Area 1.0 0.5 0.2 0.1 0.05 0.03 0.01 0.01 D = 0.5 0.2 0.1 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX 0.05 0.02 0.01 t1 0.1 t2 DUTY CYCLE, D = t1/t2 (SINGLE PULSE) 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) 0.5 1.0 5 t, TIME (ms) 10 Figure 7. Thermal Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE 340D–02 ISSUE B C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 4 BDV65B/D