ETC BDV65B/D

ON Semiconductor
NPN
BDV65B
Complementary Silicon Plastic
Power Darlingtons
PNP
BDV64B
. . . for use as output devices in complementary general purpose
amplifier applications.
• High DC Current Gain
•
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80–100–120 VOLTS
125 WATTS
HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built–in Base Emitter Shunt Resistors
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
— Peak
IC
10
20
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TC = 25C
Derate above 25C
PD
125
1.0
Watts
W/C
–65 to +150
C
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 340D–02
SOT 93, TO–218 TYPE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
θJC
1.0
C/W
Thermal Resistance, Junction to Case
1.0
DERATING FACTOR
0.8
0.6
0.4
0.2
0
0
25
75
50
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 10
1
Publication Order Number:
BDV65B/D
BDV65B BDV64B
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ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
—
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
0.4
mAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0, TC = 150C)
ICBO
—
2.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
hFE
1000
—
—
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.02 Adc)
VCE(sat)
—
2.0
Vdc
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
2.5
Vdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
NPN
PNP
10K
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 4 V
10K
1K
4
0.1
1
IC, COLLECTOR CURRENT (A)
1K
1
10
0.1
Figure 2. DC Current Gain
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
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2
10
BDV65B BDV64B
10
VBE(sat) @ IC/IB = 250
1
0.1
V, VOLTAGE (V)
V, VOLTAGE (V)
10
0.1
10
1
IC, COLLECTOR CURRENT (A)
0.1
1
VBE(sat) @ IC/IB = 250
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. “On” Voltages
100
IC, COLLECTOR CURRENT (A)
Figure 5. “On” Voltages
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150C, TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
50
20
10
dc
5
5.0 ms 1.0 ms
SECONDARY BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
1
BDV65B, BDV64B
10
50
30
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1
10
100
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 6. Active Region Safe Operating Area
1.0
0.5
0.2
0.1
0.05
0.03
0.01
0.01
D = 0.5
0.2
0.1
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
0.05
0.02
0.01
t1
0.1
t2
DUTY CYCLE, D = t1/t2
(SINGLE PULSE)
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.5
1.0
5
t, TIME (ms)
10
Figure 7. Thermal Response
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3
50
100
500
1000
BDV65B BDV64B
PACKAGE DIMENSIONS
CASE 340D–02
ISSUE B
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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BDV65B/D