FAIRCHILD FDP5N50U

TM
Ultra FRFET
FDP5N50U / FDPF5N50UT
tm
N-Channel MOSFET, FRFET
500V, 4A, 2.0
Features
Description
• RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
G D S
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
GD S
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDP5N50U
FDPF5N50UT
500
±30
V
-Continuous (TC = 25oC)
4
4*
-Continuous (TC = 100oC)
2.4
2.4*
- Pulsed
(Note 1)
Units
V
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
4
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
16*
(Note 2)
216
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
16
A
- Derate above 25oC
A
mJ
4.5
V/ns
85
28
W
0.67
0.22
W/oC
-55 to +150
oC
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP5N50U
FDPF5N50UT
RJC
Thermal Resistance, Junction to Case
1.4
4.5
RCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev. A-1
1
Units
oC/W
www.fairchildsemi.com
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
November2009
Device Marking
FDP5N50U
Device
FDP5N50U
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF5N50UT
FDPF5N50UT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
ID = 250A, Referenced to 25 C
-
0.7
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
25
VDS = 400V, TC = 125oC
-
-
250
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
o
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3
-
5
V
Static Drain to Source On Resistance
VGS = 10V, ID = 2A
-
1.65
2

gFS
Forward Transconductance
VDS = 40V, ID = 2A
-
4.8
-
S
-
485
650
pF
-
65
90
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 4A
VGS = 10V
(Note 4, 5)
-
5
8
pF
-
11
15
nC
-
3
-
nC
-
5
-
nC
-
14
38
ns
-
21
52
ns
-
27
64
ns
-
20
50
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 4A
RG = 25
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
16
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4A
-
-
1.6
V
trr
Reverse Recovery Time
-
36
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 4A
dIF/dt = 100A/s
-
33
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP5N50U / FDPF5N50UT Rev. A-1
2
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 2. Transfer Characteristics
10
10
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
o
150 C
ID,Drain Current[A]
ID,Drain Current[A]
Figure 1. On-Region Characteristics
0.1
o
25 C
1
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.02
0.1
0.1
4
30
1
10
VDS,Drain-Source Voltage[V]
5
6
7
VGS,Gate-Source Voltage[V]
2.6
30
IS, Reverse Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
RDS(ON) [],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.2
VGS = 10V
VGS = 20V
1.8
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
1
0.4
1.4
0
6
12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
Ciss
VGS, Gate-Source Voltage [V]
600
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
400
2.2
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
2. 250s Pulse Test
1.0
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
1000
Capacitances [pF]
8
200
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
*Note: ID = 4A
1
10
VDS, Drain-Source Voltage [V]
FDP5N50U / FDPF5N50UT Rev. A-1
0
30
0
3
4
8
Qg, Total Gate Charge [nC]
12
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP5N50U
30
50s
10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
o
2. TJ = 150 C
3. Single Pulse
0.01
175
1
Figure 9. Maximum Safe Operating Area
- FDPF5N50UT
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
5
30
30s
10
100s
4
1ms
ID, Drain Current [A]
ID, Drain Current [A]
100s
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
3
2
1
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
0.01
1
10
100
VDS, Drain-Source Voltage [V]
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP5N50U
Thermal Response [ZJC]
3
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
0.02
0.01
*Notes:
o
Single pulse
0.01
-5
10
FDP5N50U / FDPF5N50UT Rev. A-1
1. ZJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Typical Performance Characteristics (Continued)
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF5N50UT
Thermal Response [ZJC]
10
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
t2
0.01
*Notes:
o
0.01
0.003
-5
10
FDP5N50U / FDPF5N50UT Rev. A-1
1. ZJC(t) = 4.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
-4
10
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
5
2
10
3
10
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5N50U / FDPF5N50UT Rev. A-1
6
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as D U T
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/ d t
( D U T )
IR
M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v /d t
V
V
S D
D D
B o d y D io d e
F o r w a r d V o lta g e D r o p
FDP5N50U / FDPF5N50UT Rev. A-1
7
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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Mechanical Dimensions
TO-220
FDP5N50U / FDPF5N50UT Rev. A-1
8
www.fairchildsemi.com
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Package Dimensions
(Continued)
TO-220F
* Front/Back Side Isolation Voltage : 2500V
Dimensions in Millimeters
FDP5N50U / FDPF5N50UT Rev. A-1
9
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
FDP5N50U / FDPF5N50UT Rev. A-1
10
www.fairchildsemi.com
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
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™*
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