Order this document by BDB02C/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol BDB02C BDB02D Unit Collector – Emitter Voltage VCEO –80 –100 Vdc Collector – Base Voltage VCES –80 –100 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watt mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO –80 –100 — — Vdc — — –0.1 –0.1 — –100 40 25 400 — OFF CHARACTERISTICS Collector – Emitter Voltage (IC = –10 mA, IB = 0) BDB02C BDB02D Collector Cutoff Current (VCB = –80 V, IE = 0) (VCB = –100 V, IE = 0) BDB02C BDB02D mAdc ICBO Emitter Cutoff Current (IC = 0, VEB = –5.0 V) IEBO nAdc ON CHARACTERISTICS DC Current Gain (IC = –100 mA, VCE = –1.0 V) (IC = –500 mA, VCE = –2.0 V) hFE — Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA) VCE(sat) — –0.7 Vdc Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.0 V) VBE(on) — –1.2 Vdc fT 50 — MHz Cob — 30 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz) Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BDB02C,D 400 hFE, DC CURRENT GAIN TJ = 125°C VCE = –1.0 V 200 25°C –55°C 100 80 60 40 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 –1.0 –1.0 TJ = 25°C TJ = 25°C –0.8 –0.8 –0.6 IC = –10 mA –50 mA –100 mA –250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain –500 mA –0.4 –0.2 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.4 –0.2 VCE(sat) @ IC/IB = 10 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 0 –0.5 –1.0 –50 –500 100 –0.8 70 –1.2 Cibo TJ = 25°C 50 –1.6 θVB for VBE –2.0 30 20 10 –2.4 Cobo 7.0 –2.8 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 4. Base–Emitter Temperature Coefficient 2 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) Figure 3. On Voltages C, CAPACITANCE (pF) θ VB, TEMPERATURE COEFFICIENT (mV/°C) Figure 2. Collector Saturation Region –2.0 5.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) –50 –100 Figure 5. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data 300 200 VCE = –2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) BDB02C,D 100 70 50 DUTY CYCLE ≤ 10% –2 k 1.0 ms –1 k 100 µs –500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) –200 Figure 6. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 s TA = 25°C –100 dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BDB02C BDB02D –2.0 –5.0 –10 –20 –45 –60 –80 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) –50 –20 30 –2.0 –3.0 TC = 25°C –200 –10 –1.0 Figure 7. Active Region — Safe Operating Area 3 BDB02C,D PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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