2N1893 GENERAL PURPOSE HIGH-VOLTAGE TYPE DESCRIPTION The 2N1893 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. Products approved to CECC 50002-104 available on request. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 120 V V CER Collector-emitter Voltage (R BE ≤ 10 Ω) 100 V V CEO Collector-emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) IC Pt o t T s t g, T j October 1988 7 V Collector Current 0.5 A Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C 0.8 3 1.7 W W W – 65 to 200 °C Storage and Junction Temperature 1/5 2N1893 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 58 219 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 10 15 nA µA 10 nA I CBO Collector Cutoff Current (I E = 0) V CB = 90 V V CB = 90 V I E BO Emitter Cutoff Current (I C = 0) VE B = 5 V Collector-base Breakdown Voltage (I E = 0) I C = 100 µA 120 V V (BR)CE R * Collector-emitter Breakdown Voltage (R BE ≤ 10 Ω) I C = 10 mA 100 V V (B R)CEO Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA 80 V V ( BR) Emitter-base Breakdown Voltage (I C = 0) I E = 100 µA 7 V Collector-emitter Saturation Voltage I C = 50 mA I C = 150 mA I B = 5 mA I B = 15 mA Base-emitter Saturation Voltage I C = 50 mA I C = 150 mA I B = 5 mA I B = 15 mA DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 10 mA T amb = – 55 °C V CE V CE V CE V CE I C = 1 mA f = 1 kHz I C = 5 mA f = 1 kHz V CE = 5 V V ( BR) CBO EBO V CE (s at )* V BE (s at ) h F E* hfe fT * Small Signal Current Gain = = = = 10 10 10 10 V V V V 1.2 5 V V 0.82 0.96 0.9 1.3 V V 20 35 40 50 80 80 120 20 40 30 70 45 85 50 70 150 V CE = 10 V Transition Frequency I C = 50 mA f = 20 MHz V CE = 10 V C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V EB = 0.5 V 55 85 pF C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 13 15 pF * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 T am b = 150 °C MHz 2N1893 DC Current Gain. High-frequency Current Gain. 3/5 2N1893 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N1893 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5