® ACS110-7SN/SB2 ASD™ AC Switch Family AC LINE SWITCH MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater ■ COM ■ OUT COM G SOT-223 ACS110-7SN FEATURES ■ ■ ■ ■ ■ ■ Blocking voltage : VDRM / VRRM = +/-700V Avalanche controlled : VCL typ = 1100 V Nominal conducting current : IT(RMS) = 1A Gate triggering current : IGT < 10 mA Switch integrated driver High noise immunity : static dV/dt >500V/µs BENEFITS No external protection snubber or varistor needed Enables equipment to meet IEC 61000-4-5 & IEC 335-1 (DIL-8 package) Reduces component count up to 80 % Interfaces directly with the microcontroller Eliminates any gate kick back on the microcontroller Allows straightforward connection of several ACS™ on same cooling pad (SOT-223) G OUT COM COM COM COM ■ DIL-8 ACS110-7SB2 ■ ■ ■ ■ FUNCTIONAL DIAGRAM ■ DESCRIPTION The ACS110 belongs to the AC line switch family built around the ASD™ concept. This high performance switch circuit is able to control a load up to 1 A. The ACS™ switch embeds a high voltage clamping structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin. OUT S ON D COM April 2003 - Ed: 2A G 1/10 ACS110-7SN/SB2 ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol VDRM / VRRM Parameter Repetitive peak off-state voltage IT(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz ITSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave 2 It dI/dt Value Tj = -10 °C 700 V SOT-223 Ttab = 105 °C 1 A DIL-8 Tlead = 110 °C F =50 Hz 8 A F =60 Hz 11 A tp = 10ms 0.35 A²s F = 120 Hz 50 A/µs Fusing capability Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) Unit Tj = 125°C note 1 VPP Non repetitive line peak pulse voltage 2 kV Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Value Unit 0.1 W Note 1: according to test described by IEC61000-4-5 standard & Figure 3. GATE CHARACTERISTICS (maximum values) Symbol PG (AV) Parameter Average gate power dissipation IGM Peak gate current (tp = 20µs) 1 A VGM Peak positive gate voltage (in respect to pin COM) 5 V Value Unit THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient S = 5cm² Junction to tab/lead for full cycle sine wave conduction S = Copper surface under Tab 2/10 SOT-223 60 °C/W DIL-8 60 °C/W SOT-223 20 °C/W DIL-8 15 °C/W ACS110-7SN/SB2 PARAMETER DESCRIPTION Parameter Symbol Parameter description IGT Triggering gate current VGT Triggering gate voltage VGD Non-triggering gate voltage IH Holding current IL Latching current VTM Peak on-state voltage drop VTO On state threshold voltage Rd On state dynamic resistance IDRM / IRRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current VCL Clamping voltage ICL Clamping current ELECTRICAL CHARACTERISTICS For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3*. Symbol Test Conditions Values Unit IGT VOUT=12V (DC) RL=140Ω QII - QIII Tj=25°C MAX 10 mA VGT VOUT=12V (DC) RL=140Ω QII - QIII Tj=25°C MAX 1 V VGD VOUT=VDRM RL=3.3kΩ Tj=125°C MIN 0.15 V IH IOUT= 100mA gate open Tj=25°C MAX 45 mA IL IG= 20mA Tj=25°C MAX 65 mA Tj=25°C MAX 1.3 V VTO Tj=125°C MAX 0.8 V Rd Tj=125°C MAX 300 mΩ µA VTM IOUT = 1.4A tp=380µs IDRM / IRRM VOUT = 700V dV/dt (dI/dt)c VCL Tj=25°C MAX 2 Tj=125°C MAX 200 VOUT=460V gate open Tj=110°C MIN 500 V/µs (dV/dt)c = 20V/µs Tj=125°C MIN 0.5 A/ms ICL = 1mA Tj=25°C TYP 1100 V tp=1ms 3/10 ACS110-7SN/SB2 AC LINE SWITCH BASIC APPLICATION The ACS110 device is well adapted to Washing machine, dishwasher, tumble drier, refrigerator, water heaters,air-conditioning systems, microwave ovens and other cookware. It has been designed especially to switch on & off low power loads such as solenoid, valve, relay, dispenser, micro-motor, pump, fan and defrost heaters. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load This ACS™ switch is triggered with a negative gate current flowing out of the gate pin G. It can be driven directly by the digital controller through a resistor as shown on the typical application diagram. Several ACS110 devices can be connected on the same cooling PCB pad, which is the COM pin. Thanks to its thermal and turn off commutation performances, the ACS110 switch is able to drive with no turn off additional snubber an inductive load up to 1 A. TYPICAL APPLICATION DIAGRAM LOAD L L AC MAINS M R N OUT ACS110 S ON D COM G ST72 MCU - Vcc HIGH INDUCTIVE SWITCH-OFF OPERATION At the end of the last conduction half-cycle, the load current reaches the holding current level IH , and the ACS™ switch turns off. Because of the inductance L of the load, the current flows then through the avalanche diode D and decreases linearly to zero. During this time, the voltage across the switch is limited to the clamping voltage VCL. The energy stored in the inductance of the load depends on the holding current IH and the inductance (up to 10 H); it can reach about 10 mJ and is dissipated in the clamping diode section. The ACS switch sustains the turn off energy because its clamping section is designed for that purpose. 4/10 ACS110-7SN/SB2 Fig. A: Turn-off operation of the ACS110 switch with an electro-valve: waveform of the pin OUT current IOUT and Out-COM voltage VOUT. Fig. B: ACS110 switch static characteristic. IOUT IH VCL VOUT AC LINE TRANSIENT VOLTAGE RUGGEDNESS The ACS110 switch is able to sustain safely the AC line transient voltages either by clamping the low energy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure C is representative of the final ACS application and is also used to stress the ACS switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACS switch sustains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rise is high as shown on figure D. Such non repetitive test can be done 10 times on each AC line voltage polarity. Fig. C: Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150Ω, L = 10µH, VPP = 2kV. R Fig. D: Current and Voltage of the ACS110 during IEC61000-4-5 standard test with R = 150Ω, L = 10µH & VPP = 2kV. L OUT ACSxx S SURGE VOLTAGE AC LINE & GENERATOR VAC + V PP ON D G COM RG = 220Ω 5/10 ACS110-7SN/SB2 OTHER FIGURES Maximum power dissipation vs RMS on state current. RMS on-state current vs ambient temperature, case temperature and package Relative variation of thermal impedance junction to ambient vs pulse duration and package Relative variation of gate trigger current vs junction temperature Relative variation of holding and latching current vs junction Relative variation of dV/dt vs Tj Relative variation of (dV/dt)c vs (di/dt)c Surge peak on-state current vs number of cycles Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t. On-state characteristics (maximal values) Thermal resistance junction to ambient vs copper surface under tab Relative variation of critical (di/dt)c vs junction temperature Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2-1: RMS on-state current versus tab or lead temperature. P(W) IT(RMS)(A) 1.1 1.1 α=180° 1.0 α=180° 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 SOT-223 - DIL-8 0.3 0.3 180° 0.2 α 0.1 α 0.2 0.1 IT(RMS)(A) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Ttab/Tlead(°C) 0.0 0.0 0.7 0.8 0.9 1.0 Fig. 2-2: RMS on-state current versus ambient temperature. 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. IT(RMS)(A) K=[Zth(j-a)/Rth(j-a)] 1.1 1.E+00 α=180° Printed circuit board FR4 Natural convection S=5cm² 1.0 0.9 0.8 0.7 0.6 1.E-01 0.5 0.4 0.3 0.2 0.1 Tamb(°C) tp(s) 0.0 0 25 50 75 100 125 1.E-02 1.E-03 6/10 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 ACS110-7SN/SB2 Fig. 4: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). Fig. 5: Relative variation of static dV/dt versus junction temperature. dV/dt [Tj] / dV/dt [Tj = 125°C] IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C] 4.0 8 3.5 7 VOUT=460V 6 3.0 IGT 2.5 5 2.0 4 3 1.5 IL & IH 2 1.0 1 0.5 Tj(°C) Tj(°C) 0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 6: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 25 VOUT=400V 75 100 (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] VOUT=400V 18 4.0 16 3.5 14 3.0 12 2.5 10 2.0 8 1.5 6 1.0 125 Fig. 7: Relative variation of critical rate of decrease of main current versus junction temperature. 20 4.5 50 4 0.5 (dV/dt)c (V/µs) 2 0.0 Tj(°C) 0 0 5 10 15 20 25 30 35 40 45 50 Fig. 8: Surge peak on-state current versus number of cycles. 25 50 75 100 125 Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM(A), I²t (A²s) ITSM(A) 100.0 10 Tj initial=25°C 9 t=20ms 8 ITSM Non repetitive Tj initial=25°C 7 10.0 6 5 4 Repetitive Tab=105°C 3 1.0 I²t 2 1 tp(ms) Number of cycles 0 0.1 1 10 100 1000 0.01 0.10 1.00 10.00 7/10 ACS110-7SN/SB2 Fig. 10: values). On-state characteristics Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) (maximum Rth(j-a)(°C/W) ITM(A) 130 10.00 SOT-223 120 Tj max. : Vto=0.8V Rd=300mΩ 110 100 90 1.00 80 Tj=125°C 70 60 50 Tj=25°C 0.10 40 30 20 VTM(V) S(cm²) 10 0 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ORDERING INFORMATION ACS 1 10 - 7 S AC Switch VDRM 7 = 700V Number of switches IT(RMS) 10 = 1.0A 8/10 X Package N = SOT-223 B2 = DIL-8 Gate Sensitivity S= 10mA 4.0 4.5 5.0 ACS110-7SN/SB2 PACKAGE OUTLINE MECHANICAL DATA SOT-223 REF. c A V A1 B e1 D PIN B1 4 DESCRIPTION 1 GATE BASE 2 DRAIN COLLECTOR 3 SOURCE EMITTER 4 DRAIN H E 1 2 3 e COLLECTOR A A1 B B1 c D e e1 E H V DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 1.80 0.02 0.10 0.001 0.60 0.70 0.85 0.024 0.027 2.90 3.00 3.15 0.114 0.118 0.24 0.26 0.35 0.009 0.010 6.30 6.50 6.70 0.248 0.256 2.3 0.090 4.6 0.181 3.30 3.50 3.70 0.130 0.138 6.70 7.00 7.30 0.264 0.276 10° max Max. 0.071 0.004 0.033 0.124 0.014 0.264 0.146 0.287 PACKAGE FOOT PRINT SOT-223 Recommended soldering pattern SOT-223 9/10 ACS110-7SN/SB2 PACKAGE OUTLINE MECHANICAL DATA DIL-8 DIMENSIONS REF. Millimetres Min. L c b2 e eA eB E D 8 Typ. Max. 5.33 0.21 A A1 b Typ. Max. Min. A A2 Inches H 5 A1 0.38 0.015 A2 2.92 3.30 4.95 0.115 0.130 0.195 b 0.36 0.46 0.56 0.014 0.018 0.022 b2 1.14 1.52 1.78 0.045 0.060 0.070 c 0.20 0.25 0.36 0.008 0.010 0.014 D 9.02 9.27 10.16 0.355 0.365 0.40 E 7.62 7.87 8.26 E1 6.10 6.35 7.11 0.240 0.25 0.280 0.30 0.310 0.325 GAUGE PLANE 0.38 E1 1 4 e 2.54 0.10 eA 7.62 0.30 eB L 10.92 2.92 3.30 0.430 3.81 0.115 0.130 0.15 OTHER INFORMATION ■ Ordering type Marking Package Weight Base qty Delivery mode ACS110-7SN ACS1107S SOT-223 0.12 g 1000 Tape & reel ACS110-7SB2 ACS1107S DIL8 0.6 g 50 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10