T1235H Series ® 12A TRIACS SNUBBERLESS™ HIGH TEMPERATURE MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 V IGT (Q1) 35 mA G A1 A2 DESCRIPTION Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. A2 A1 A2 A1 A2 G G D2PAK (T1235-G) TO-220AB (T1235-T) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter PG(AV) Tstg Tj Unit Tc = 135°C 12 A F = 60 Hz t = 16.7 ms 145 A F = 50 Hz t = 20 ms 140 RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM Value Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range April 2002 - Ed: 5A tp = 10 ms 112 A² s F = 120 Hz Tj = 150°C 50 A/µs tp = 10 ms Tj = 25°C 700 V tp = 20 µs Tj = 150°C 4 A Tj = 150°C 1 W - 40 to + 150 - 40 to + 150 °C 1/7 T1235H Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions IGT (1) VD = 12 V RL = 33 Ω VGD VD = VDRM RL = 3.3 kΩ IH (2) IT = 100 mA IL IG = 1.2 IGT VGT Quadrant Tj = 150°C Value Unit I - II - III MAX. 35 mA I - II - III MAX. 1.3 V I - II - III MIN. 0.15 V MAX. 35 mA 50 mA I - III MAX. II dV/dt (2) (dI/dt)c (2) 80 VD = 67 % VDRM gate open Tj = 150°C MIN. 300 V/µs Without snubber MIN. 5.3 A/ms Tj = 150°C STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 17 A Vto (2) Rd (2) tp = 380 µs MAX. 1.5 V Threshold voltage Tj = 150°C MAX. 0.80 V Dynamic resistance Tj = 150°C MAX. 25 mΩ 5 µA MAX. 5.5 Tj = 25°C Tj = 150°C IRRM Unit Tj = 25°C VDRM = VRRM IDRM Value VD/VR = 400 V (at mains peak voltage) Tj = 150°C mA 3.5 Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient Value S = 1 cm² D²PAK TO-220AB 1.2 D²PAK 45 TO-220AB 60 Unit °C/W °C/W S: Copper surface under tab PRODUCT SELECTOR Part Number Voltage Sensitivity Type T1235H-600G 600 V 35 mA Snubberless D²PAK T1235H-600T 600 V 35 mA Snubberless TO-220AB 2/7 Package T1235H Series ORDERING INFORMATION T 12 35 TRIAC SERIES H - 600 G HIGH TEMPERATURE (-TR) PACKAGE: G: D2PAK T: TO-220AB CURRENT: 12A VOLTAGE: 600: 600V SENSITIVITY: 35: 35mA PACKING MODE: Blank: Tube (D2PAK) Blank: Bulk (TO-220AB) RG: Tube (TO-220AB) 2 -TR: Tape & Reel (D PAK) OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode T1235H-600G T1235H600G 1.5 g 50 Tube T1235H-600G-TR T1235H600G 1.5 g 1000 Tape & reel T1235H-600T T1235H600T 2.3 g 250 Bulk T1235H-600TRG T1235H-600T 2.3 g 50 Tube Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). 14 Fig. 2-1: RMS on-state current versus case temperature (full cycle). P(W) IT(RMS)(A) 14 12 12 10 10 8 8 6 6 4 4 2 0 2 IT(RMS)(A) 0 2 4 6 8 10 12 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle. 5 0 Tc(°C) 0 25 50 75 100 125 150 Fig. 3: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) K=[Zth/Rth] 1.00 D2PAK (S=1cm2) 4 Zth(j-c) 3 0.10 Zth(j-a) 2 1 tp(s) Tamb(°C) 0 0 25 50 75 100 125 150 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/7 T1235H Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Surge peak on-state current versus number of cycles. IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] ITSM(A) 2.5 150 125 2.0 One cycle 100 1.5 Non repetitive Tj initial=25°C 75 IH & IL 1.0 Repetitive Tc=135°C 50 0.5 25 Tj(°C) 0.0 -40 -20 0 20 40 Number of cycles 60 80 100 120 140 160 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 0 1 10 Fig. 7: values). ITSM(A),I²t(A²s) 100 On-state characteristics 1000 (maximum ITM(A) 200 2000 1000 t=20ms IGT Tj initial=25°C Tj max. Vto = 0.80 V Rd = 25 mΩ 100 dI/dt limitation: 50A/µs Tj max. 10 ITSM tp(ms) 100 0.01 0.10 Tj=25°C VTM(V) I²t 1.00 10.00 Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [Tj] / (dI/dt)c [Tj=150°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 8 6.0 7 5.0 6 4.0 5 4 3.0 3 2.0 2 1.0 1 0 25 4/7 (dV/dt)c (V/µs) Tj(°C) 50 75 100 125 150 0.0 0.1 1.0 10.0 100.0 T1235H Series Fig. 10: Leakage current versus junction temperature for different values of blocking voltage (typical values). Fig. 11: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. VDRM/VRRM(V) IDRM/IRRM(mA) 1E+1 700 Tj=150°C Rth(j-c)=1.2°C/W 600 VD=VR=600V 1E+0 500 VD=VR=400V 400 1E-1 VD=VR=200V 300 200 1E-2 100 Tj(°C) 1E-3 50 75 100 125 150 0 Rth(c-a)(°C/W) 0 2 4 6 8 10 12 14 16 18 20 Fig. 12: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). 80 Rth(j-a) (°C/W) D²PAK 70 60 50 40 30 20 10 0 S(cm²) 0 4 8 12 16 20 24 28 32 36 40 5/7 T1235H Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e 6/7 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 T1235H Series PACKAGE MECHANICAL DATA D²PAK (Plastic) DIMENSIONS REF. A E Min. C2 L2 D L L3 A1 B2 Millimeters R C B G A2 2.0 MIN. FLAT ZONE V2 A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 Typ. Min. Typ. Max. 4.60 2.69 0.23 0.93 1.40 0.40 0° Max. Inches 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8° FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7