BYT30G-400 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 30 A 400 V 50 ns 1.4 V 1&3 4 4 FEATURES AND BENEFITS 2 VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SMD PACKAGE 3 1 D2PAK (Plastic) DESCRIPTION Single rectifier suited for freewheeling in converters and motor control circuits. Packaged in D2PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current Tc=100°C δ = 0.5 30 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 350 A IFRM Repetitive peak forward current tp = 5µs f = 5 kHz 280 A Tstg Tj Storage and junction temperature range - 40 to + 150 °C October 1999 - Ed: 3A 1/5 BYT30G-400 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit 1 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current VF ** Pulse test : Test Conditions Forward voltage drop Max. Unit Tj = 25°C 35 µA Tj = 100°C 6 mA IF = 30 A Tj = 100°C 1.4 V IF = 30 A Tj = 25°C 1.5 VR = VRRM Min. Typ. * tp = 5 ms, δ< 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV) + 0.0095 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time Test Conditions Min. Typ. Max. Unit ns Tj = 25°C Irr = 0.25 A IF = 0.5A I R = 1A 50 Tj = 25°C dIF/dt = -15A/µs IF = 1A VR = 30V 100 TURN-OFF SWITCHING CHARACTERISTICS Symbol Parameter tIRM Maximum reverse recovery time Tj = 100°C dIF/dt = -120A/µs IF = 30 A dIF/dt = -240A/µs Maximum reverse recovery current VCC = 200 V dIF/dt = -120A/µs Lp < 0.05 µH dIF/dt = -240A/µs Turn-off overvoltage coefficient IF = IF(AV) Tj = 100°C VCC = 60 V Lp = 1 µH dIF/dt = -30A/µs IRM C factor Test Conditions PIN OUT configuration in D2PAK: 2/5 Min. Typ. Max. Unit 75 ns 9 ns 50 12 3.3 / BYT30G-400 Fig.1 : Average forward power dissipation versus average forward current. I M(A) P F(av)(W) 55 50 45 40 35 30 25 20 15 10 5 0 0 Fig.2 : Peak current versus form factor. 40 500 T 450 400 IM P=20W 350 =tp/T 300 tp 250 200 P=30W 150 100 P=40W 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. =1 =0.5 =0.2 =0.1 =0.05 T I F(av)(A) 5 10 15 20 =tp/T 25 30 tp 35 K VFM(V) 2.0 1.8 Tj= 100 o C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1 0.5 ) = 0.5 =0.2 =0.1 T 0.2 Single pulse I FM(A) tp(s) 1 10 100 Fig.5 : Non repetitive surge peak forward current versus overload duration. 250 Zth(j-c) (tp. K = Rth(j-c) IM(A) 0.1 0.001 0.01 =tp/ T 0.1 tp 1 Fig.6 : Average current versus ambient temperature. (δ: 0.5) 35 IF(av) (A) Rth(j-a)=Rth(j-c) 30 200 25 150 =0.5 T 20 Tc=25 oC 15 100 =tp/T Tc= 60 o C IM 50 Tc=100 o C t 0.01 Rth(j-a)=15 o C/W 5 t(s) =0.5 0 0.001 tp 10 Tamb( o C) 0.1 1 0 0 20 40 60 80 100 120 140 160 3/5 BYT30G-400 Fig.7 : Reverse recovery charge versus dIF/dt. Fig.8 : Forward recovery times versus dIF/dt. Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Peak forward voltage versus dIF/dt. Fig.11: Dynamic parameters versus junction temperature. 4/5 BYT30G-400 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E C2 L2 D L L3 A1 B2 B R C G A2 M * V2 * FLAT ZONE NO LESSTHAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0° 8° 0° 8° FOOT PRINT (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5