SD1540 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . .. .. .. . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS (typ.) IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz 2900 WATTS (typ.) TACAN 960 - 1215 MHz 6.3 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 SQ. 2LFL (M103) epoxy sealed ORDER CODE SD1540 BRANDING SD1540 PIN CONNECTION DESCRIPTION The SD1540 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1540 is packaged in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 22 A Power Dissipation 875 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.20 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1/5 SD1540 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 65 — — V BVEBO IE = 5mA IC = 0mA 3.5 — — V VCE = 50V IE = 0mA — — 25 mA ICES DYNAMIC Symbol Min. Typ. Max. Unit POUT f = 1025 — 1150MHz PIN = 70 W VCE = 50 V 300 — — W GP f = 1025 — 1150MHz PIN = 70 W VCE = 50 V 6.3 — — dB Note: Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions asistance. TYPICAL PERFORMANCE 2/5 Value Test Conditions SD1540 IMPEDANCE DATA 3/5 SD1540 TEST CIRCUIT All Dimension are in Inches C1 C2 C3 C4, C5 : : : : L1 : 2 3/4 Turns Diameter 16 Tinned .125 I.D. .215 Long : 2 3/4 Turns Diameter 20 Tinned .090 I.D. .220 Long L2 4/5 100pF Chip Capacitor Across .120 Sq. Gap .6 - 4.5pF JOHANSON 470pF Chip Capacitor Across .120 Sq. Gap .35 - 3.5pF Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 : : : : : : : : .395 .250 .495 .360 .485 .520 .270 .270 x .083 x .340 x .083 x 1.193 x 1.2 x .035 x .330 x .110 SD1540 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0103 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5