STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE STD5NM50 STD5NM50-1 n n n n n n VDSS RDS(on) ID 500V 500V <0.8Ω <0.8Ω 7.5 A 7.5 A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 3 2 1 1 DPAK TO-252 IPAK TO-251 (Add Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 7.5 A ID Drain Current (continuous) at TC = 100°C 4.7 A Drain Current (pulsed) 30 A Total Dissipation at TC = 25°C 100 W Derating Factor 0.8 W/°C Peak Diode Recovery voltage slope 15 V/ns – 55 to 150 °C VDS VDGR VGS IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area September 2002 (1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. 1/10 STD5NM50/STD5NM50-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W 300 °C Tl Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V V(BR)DSS Min. Typ. Max. 500 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5A Min. Typ. Max. Unit 3 4 5 V 0.7 0.8 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions VDS = 25Vx, ID = 2.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3.5 S 415 pF Ciss Input Capacitance Coss Output Capacitance 88 pF Crss Reverse Transfer Capacitance 12 pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 50 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 3 Ω RG 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2/10 STD5NM50/STD5NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 250V, ID = 2.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 16 ns 8 ns VDD = 400V, ID = 7.5A VGS = 10V 13 nC 5 nC 6 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 5A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 14 ns 6 ns 13 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 7.5 A ISDM (2) Source-drain Current (pulsed) 30 A VSD (1) Forward On Voltage ISD = 7.5A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 5A, di/dt = 100A/µs, VDD = 100V, Tj = 25°C (see test circuit, Figure 5) Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Qrr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IRRM ISD = 5A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 185 ns 1.1 µC 11.5 A 270 1.6 12 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD5NM50/STD5NM50-1 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD5NM50/STD5NM50-1 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 5/10 STD5NM50/STD5NM50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD5NM50/STD5NM50-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/10 STD5NM50/STD5NM50-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 8/10 STD5NM50/STD5NM50-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 0.059 0.063 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 9/10 0.641 MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD5NM50/STD5NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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