STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE V CES V CE(s at) IC STGB10NB37LZ CLAMPED < 1.8 V 10 A ■ ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 D2PAK TO-263 DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AUTOMOTIVE IGNITION ■ ABSOLUTE MAXIMUM RATINGS Symb ol Parameter V CES Collector-Emitter Voltage (VGS = 0) V ECR Reverse Battery Protection V GE G ate-Emitter Voltage o Value Un it CLAMPED V 18 V CLAMPED V IC Collector Current (continuous) at Tc = 25 C 20 A IC Collector Current (continuous) at Tc = 100 C o 20 A Collector Current (pulsed) 60 A T otal Dissipation at Tc = 25 C 125 W Derating Factor 0.83 W /o C 4 KV I CM (•) P tot o E SD ESD (Human Body Model) T s tg Storage T emperature Tj Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area June 1999 1/8 STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp o 1.2 62.5 0.2 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions BV (CES) Clamped Voltage I C = 2 mA T j = - 40 to 150 o C BV (ECR) Emitter Collector Break-down Voltage I C = 75 mA T j = - 40 to 150 o C BV GE Gate Emitter Break-down Voltage I C =± 2 mA Τ j = - 40 to 150 o C I CES Collector cut-off Current (VGE = 0) V CE = 15 V V CE = 200 V IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 10 V R GE Gate Emitter Resistance V GE = 0 V GE = 0 Min. Typ. Max. Unit V GE = 0 375 400 425 V V GE = 0 18 V 12 Tj = 150 oC o T j = 150 C V CE = 0 16 V 10 100 µA µA ± 0.7 mA 20 KΩ ON (∗) Symbo l V GE(th) V CE(SAT ) IC Parameter Test Con ditions Gate Threshold Voltage V CE = V GE IC = 250 µA T j = - 40 to 150 o C Collector-Emitt er Saturation Voltage V GE = 4.5 V V GE = 4.5 V Collector Current V GE = 4.5 V IC = 10 A IC = 10 A Min. Typ. 0.6 T j = 25 o C o T j = - 40 C V CE = 9 V 1.2 1.3 Max. Unit 2.4 V 1.8 V V 20 A DYNAMIC Symbo l gf s C i es C o es C res QG 2/8 Parameter Test Con ditions Forward Transconductance V CE = 25 V Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V Gate Charge V CE = 320 V I C = 10 A f = 1 MHz IC = 10 A V GE = 0 V GE = 5 V Min. Typ. 10 18 1250 103 18 28 Max. Unit S 1700 140 25 pF pF pF nC STGB10NB37LZ FUNCTIONAL CHARACTERISTICS Symbo l II U.I. S. Parameter Test Con ditions Latching Current V CLAMP = 320 V R GOF F = 1 KΩ Unclamped Inductive Switching Current Functional Test Min. V GE = 5 V T C = 125 o C Typ. Max. Unit 20 A R GOF F=1 KΩ L =200 µH Tj = 125 o C 15 A R GOF F=1 KΩ L =3 mH T start = 55 o C 12 A E AS Single Pulse Avalanche Energy T start = 55 o C T start = 150 o C 215 150 mJ mJ E AR Reverse Avalanche Energy T c = 125 oC duty cycle < 1% pulse width limited by t jmax 10 mJ Max. Unit ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Test Con ditions Min. Typ. Delay Time Rise Time V CC = 320 V V GE = 5 V I C = 10 A R G = 1 KΩ 520 340 ns ns Turn-on Current Slope Turn-on Switching Losses V CC = 320 V R G = 1 KΩ I C = 10 A V GE = 5 V 17 180 A/µs µJ SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tc t r (v off ) tf td (o ff ) E o ff(**) Cross-O ver Time V CLAMP = 320 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime Off Voltage Delay Time Turn-off Switching Loss I C = 10 A V GE = 5 V 4 2.2 1.5 14.8 4.0 µs µs µs µs mJ tc t r (v off ) tf td (o ff ) E o ff(**) Cross-O ver Time V CLAMP = 320 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime o Off Voltage Delay Time T j = 125 C Turn-off Switching Loss I C = 10 A V GE = 5 V 5.2 2.8 2 15.8 6.5 µs µs µs µs mJ (•) Pulse width limited by safe operating area Safe Operating Area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)Losses Include Also The Tail (jedec Standardization) Thermal Impedance 3/8 STGB10NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temperature Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Gate-Emitter Voltage 4/8 STGB10NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Break-down Voltage vs Temperature Clamping Voltage vs Gate Resistance 5/8 STGB10NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 6/8 STGB10NB37LZ TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL”A” DETAIL ”A” A1 B2 E B G L2 L L3 P011P6/E 7/8 STGB10NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. 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