STGP10NB37LZ N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh™ IGBT ■ ■ ■ ■ ■ ■ TYPE VCES VCE(sat) IC STGP10NB37LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 2 TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Reverse Battery Protection VGE Gate-Emitter Voltage IC ICM PTOT Collector Current (continuos) at TC = 100°C Unit CLAMPED V 18 V CLAMPED V 20 A Collector Current (pulse width < 100µs) 60 A Total Dissipation at TC = 25°C 125 W Derating Factor 0.83 W/°C 4 KV ESD ESD (Human Body Model) Tstg Storage Temperature Tj Value Max. Operating Junction Temperature November 2000 –65 to 175 °C 175 °C 1/9 STGP10NB37LZ THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ 1.2 °C/W 62.5 °C/W 0.2 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit 400 425 V BV(CES) Clamped Voltage IC = 2 mA, VGE = 0, Tj= - 40°C to 150°C 375 BV(ECR) Emitter Collector Break-down Voltage IEC = 75 mA, VGE = 0, Tj= - 40°C to 150°C 18 Gate Emitter Break-down Voltage IG = ± 2 mA Tj= - 40°C to 150°C 12 Collector cut-off Current (VGE = 0) VCE = 15 V, VGE =0 ,Tj =150 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 10V , VCE = 0 RGE Gate Emitter Resistance BVGE ICES V VCE =200 V, VGE=0 ,TC =150°C 16 V 10 µA 100 µA ± 700 µA 20 KΩ ON (1) Symbol VGE(th) VCE(SAT) IC Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Collector Current Test Conditions VCE = VGE, IC = 250µA, Tj= - 40°C to 150°C Min. Typ. 0.6 VGE =4.5V, IC = 10 A, Tj= 25°C 1.2 VGE =4.5V, IC = 10 A, Tc= -40°C 1.3 VGE = 4.5V, VCE = 9 V Max. Unit 2.4 V 1.8 V V 20 A DYNAMIC Symbol gfs Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg 2/9 Parameter Gate Charge Test Conditions VCE = 15 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 VCE = 320V, IC = 10 A, VGE = 5V Min. Typ. Max. Unit 18 S 1250 pF 103 pF 18 pF 28 nC STGP10NB37LZ FUNCTIONAL CHARACTERISTICS Symbol IL U.I.S. Parameter Test Conditions Min. Typ. Max. Unit Latching Current VClamp = 320 V, TC = 125 °C RGOFF = 1KΩ , VGE = 5 V L = 300µH 20 A Unclamped Inductive Switching Current RGOFF = 1KΩ , L = 1.6 mH , Tc= 125°C, Vcc = 30V 15 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Rise Time VCC = 320 V, IC = 10 A RG = 1KΩ , VGE = 5 V 340 ns Turn-on Current Slope Turn-on Switching Losses VCC= 320 V, IC = 10 A RG=1KΩ, VGE = 5 V 17 180 A/µs µJ Turn-on Delay Time 520 ns SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Test Conditions Vclamp = 320 V, IC = 10 A, RGE = 1K Ω , VGE = 5 V Delay Time Min. Typ. Max. Unit 4 µs 2.2 µs 14.8 µs Fall Time 1.5 µs Turn-off Switching Loss 4.0 mJ 5.2 µs 2.8 µs Cross-over Time Off Voltage Rise Time Vclamp = 320 V, IC = 10 A, RGE = 1KΩ , VGE = 5 V Tj = 125 °C Delay Time Fall Time Turn-off Switching Loss 15.8 µs 2 µs 6.5 mJ (●)Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Normalized Transient Thermal Impedance 3/9 STGP10NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Normalized Collector-Emitter On Voltage vs Temperature Normalized Collector-Emitter On Voltage vs Gate-Emitter Voltage 4/9 STGP10NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Clamping Voltage vs Gate Resistance 5/9 STGP10NB37LZ Self Clamped Inductive Switching IMAX vs Open Secondary Coil 6/9 STGP10NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/9 STGP10NB37LZ TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/9 L4 P011C STGP10NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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