STMICROELECTRONICS STGD7NB60ST4

STGD7NB60S
®
N-CHANNEL 7A - 600V DPAK
Power MESH IGBT
TYPE
V CES
V CE(sat)
IC
STGD7NB60S
600 V
< 1.6 V
7A
■
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
DPAK
TO-252
(Suffix "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CES
Collector-Emitter Voltage (V GS = 0)
Parameter
600
V
V ECR
Reverse Battery Protection
20
V
V GE
Gate-Emitter Voltage
± 20
V
15
A
7
A
60
A
55
W
0.44
W/ o C
o
IC
Collector Current (continuous) at T c = 25 C
IC
Collector Current (continuous) at T c = 100 o C
ICM (•)
P tot
Collector Current (pulsed)
o
Total Dissipation at T c = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
November 1999
1/8
STGD7NB60S
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
o
2.27
100
1.5
Max
Max
Typ
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V BR(CES)
Collector-Emitter
Breakdown Voltage
I C = 250 µA
V GE = 0
600
V
V BR(ECR)
Emitter-Collector
Breakdown Voltage
IC = 1 mA
V GE = 0
20
V
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (V CE = 0)
V GE = ± 20 V
10
100
µA
µA
± 100
nA
Max.
Unit
5
V
1
1.2
1.1
1.4
1.6
V
V
V
Typ.
Max.
Unit
T j = 25 o C
T j = 125 o C
V CE = 0
ON (∗)
Symbol
V GE(th)
V CE(SAT)
Parameter
Test Conditions
Gate Threshold
Voltage
V CE = V GE
I C = 250 µA
Collector-Emitter
Saturation Voltage
V GE = 15 V
V GE = 15 V
V GE = 15 V
IC = 3 A
IC = 7 A
IC = 7 A
Min.
Typ.
2.5
T j = 125 o C
DYNAMIC
Symbol
gf s
Parameter
Test Conditions
Forward
Transconductance
V CE =25 V
IC = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Gate Charge
V CE = 400 V
I CL
Latching Current
V clamp = 480 V
T j = 150 o C
C ies
C oes
C res
IC = 7 A
Min.
4
V GE = 0
610
65
12
V GE = 15 V
R G =1kΩ
S
780
85
15
33
pF
pF
pF
nC
15
A
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
E on
2/8
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 7 A
R G = 1 KΩ
0.7
0.46
µs
µs
Turn-on Current Slope
V CC = 480 V
R G = 1 KΩ
T j = 125 o C
IC = 7 A
V GE = 15 V
8
A/µs
0.4
mJ
Turn-on
Switching Losses
STGD7NB60S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
tf
E off (**)
V CC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 100 Ω
Fall Time
Turn-off Switching Loss
IC = 7 A
V GE = 15 V
2.2
1.2
1.2
3.5
µs
µs
µs
mJ
tc
t r (v off )
tf
E off (**)
V CC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 100 Ω
Fall Time
T j = 125 o C
Turn-off Switching Loss
IC = 7 A
V GE = 15 V
3.8
1.2
1.9
5.3
µs
µs
µs
mJ
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD7NB60S
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD7NB60S
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Temperature
Off Losses vs Collector Current
5/8
STGD7NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
6/8
Fig. 2: Test Circuit For Inductive Load Switching
STGD7NB60S
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
7/8
STGD7NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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.