STGB20NB41LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB41LZ CLAMPED < 2.0 V 20 A ■ ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D²PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUTOMOTIVE IGNITION ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING STGB20NB41LZT4 GB20NB41LZ D2PAK TAPE & REEL April 2004 1/9 STGB20NB41LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Emitter-Collector Voltage VGE Gate-Emitter Voltage Value Unit CLAMPED V 20 V CLAMPED V IC Collector Current (continuous) at TC = 25°C 40 A IC Collector Current (continuous) at TC = 100°C 20 A Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ PTOT Total Dissipation at TC = 25°C 200 W Derating Factor 1.33 W/°C 8 KV – 55 to 175 °C ICM () ESD ESD (Human Body Model) Tstg Storage Temperature Tj Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit 442 V BV(CES) Clamped Voltage IC= 2 mA, VGE= 0, Tc= - 40°C ÷ 150°C 382 412 BV(ECR) Emitter Collector Break-down Voltage IC= 75 mA, Tc= 25°C 20 28 BVGE Gate Emitter Break-down Voltage IG= ± 2 mA 12 14 ICES Collector cut-off Current (VGE = 0) IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ± 10V , VCE= 0 RGE Gate Emitter Resistance V 16 V VCE= 15 V, VGE= 0 ,TC= 150 °C 10 µA VCE=200 V, VGE= 0 ,TC= 150°C 100 µA ± 300 ± 660 ± 1000 µA 10 15 30 KΩ Typ. Max. Unit 2.4 V 1.8 2.0 V V ON (1) Symbol VGE(th) VCE(SAT) 2/9 Test Conditions Min. Gate Threshold Voltage Parameter VCE= VGE, IC= 250µA, Tc=25°C 1 Collector-Emitter Saturation Voltage VGE= 4.5V, IC= 10 A, Tc= 25°C VGE= 4.5V, IC= 20 A, Tc= 25°C 1.1 1.3 STGB20NB41LZ DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC =20 A Typ. Max. Unit 35 S 2300 pF Cies Input Capacitance Coes Output Capacitance 160 pF Cres Reverse Transfer Capacitance 25 pF 46 nC Qg Gate Charge VCE = 25V, f = 1 MHz, VGE = 0 VCE = 320V, IC = 20 A, VGE = 5V FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Test Conditions Latching Current VClamp = 320 V, TC = 125 °C RGOFF = 1KΩ , VGE = 10 V Functional Test Open Secondary Coil RGOFF =1KΩ , L = 1.6mH, Tc=125°C Min. Typ. Max. 40 Unit A 20 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 320 V, IC = 20 A RG = 1KΩ , VGE = 5 V 1 0.22 µs µs Turn-on Current Slope VCC= 320 V, IC = 20 A RG=1KΩ, VGE = 5 V 140 A/µs Turn-on Switching Losses VCC= 320 V, IC = 20 A, Tc=25°C 5 mJ RG=1KΩ, VGE = 5 V, Tc=150°C 5.1 mJ SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) tc Parameter Cross-over Time Off Voltage Rise Time Test Conditions Vcc = 320 V, IC = 20 A, RGE = 1K Ω , VGE = 5 V Min. Typ. Max. Unit 4.4 µs 2.5 µs Delay Time 12.1 µs Fall Time 1.6 µs Turn-off Switching Loss 12.9 mJ 6 µs Cross-over Time Vcc = 320 V, IC = 20 A, RGE = 1 KΩ , VGE = 5 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 3.16 µs td(off) Delay Time 13.4 µs Fall Time 2.7 µs Turn-off Switching Loss 18.4 mJ tf Eoff(**) (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail 3/9 STGB20NB41LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Normalized Collector-Emitter On Voltage vs Temperature Normalized Collector-Emitter On Voltage vs Gate-Emitter Voltage 4/9 STGB20NB41LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Normalized BVGE vs Temperature 5/9 STGB20NB41LZ Off Losses vs Temperature Thermal Impedance 6/9 Switching Off Safe Operating Area STGB20NB41LZ D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STGB20NB41LZ D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 8/9 inch 0.933 0.956 inch MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGB20NB41LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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