STMICROELECTRONICS STGB20NB37LZ

STGB20NB37LZ

N-CHANNEL CLAMPED 20A D2PAK
INTERNALLY CLAMPED PowerMESH IGBT
PRELIMINARY DATA
TYPE
V CES
V CE(s at)
IC
STGB20NB37LZ
CLAMPED
< 2.0 V
20 A
■
■
■
■
■
■
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
AUTOMOTIVE IGNITION
■
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V CES
Collector-Emitter Voltage (V GS = 0)
V ECR
Reverse Battery Protection
V GE
Gate-Emitter Voltage
Value
Un it
CLAMPED
V
20
V
CLAMPED
V
40
A
IC
Collector Current (continuous) at Tc = 25 o C
IC
Collector Current (continuous) at Tc = 100 o C
30
A
Collector Current (pulsed)
80
A
I CM (•)
E AS
Single Pulse Energy Tc = 25 o C
700
mJ
P tot
T otal Dissipation at Tc = 25 o C
150
W
1
W /o C
4
KV
Derating Factor
E SD
ESD (Human Body Model)
T s tg
Storage Temperature
Tj
Max. O perating Junction Temperature
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
February 2000
1/6
STGB20NB37LZ
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
1
62.5
0.2
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
BV (CES)
Clamped Voltage
I C =2mA
I C =2mA
I C =2mA
BV (ECR)
Emitter Collector
Break-down Voltage
I C = 75 mA
BV GE
Gate Emitter
Break-down Voltage
I G =± 2 mA
I CES
Collector cut-off
Current (VGE = 0)
V CE = 15 V
V CE = 200 V
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 10 V
RGE
Gate Emitter Resistanc e
V GE = 0
V GE = 0
V GE = 0
Min.
Typ.
Max.
Unit
T C = - 40 C
T C = 25 o C
o
T C = 150 C
380
375
370
405
400
395
430
425
420
V
V
V
25 o C
20
28
12
14
o
TC =
V GE = 0 T C = 150 o C
V GE = 0 T C = 150 oC
V CE = 0
V
16
V
10
100
µA
µA
± 300
± 660
± 1000
µA
10
15
30
KΩ
Min.
Typ.
Max.
Unit
1.2
1.0
0.6
1.4
2
V
V
V
1.1
1.0
1.35
1.25
1.8
1.7
2.0
2.0
V
V
V
V
Typ.
Max.
Unit
ON (∗)
Symbo l
V GE(th)
V CE(SAT )
Parameter
Test Con ditions
o
Gate Threshold
Voltage
V CE = V GE IC = 250µA
V CE = V GE IC = 250µA
V CE = V GE IC = 250µA
T C = - 40 C
o
T C = 25 C
o
T C = 150 C
Collector-Emitt er
Saturation Voltage
V GE
V GE
V GE
V GE
T C = 25 o C
T C= 150 o C
T C = 25 o C
T C= 150 o C
=
=
=
=
4.5
4.5
4.5
4.5
V
V
V
V
IC
IC
IC
IC
=
=
=
=
10
10
20
20
A
A
A
A
DYNAMIC
Symbo l
gf s
C i es
C o es
C res
QG
2/6
Parameter
Test Con ditions
Forward
Transconductance
V CE = 25 V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
Gate Charge
V CE = 280 V
Min.
I C = 20 A
f = 1 MHz
IC = 20 A
V GE = 0
V GE = 5 V
35
S
2300
165
28
pF
pF
pF
51
nC
STGB20NB37LZ
FUNCTIONAL CHARACTERISTICS
Symbo l
II
U.I. S.
Parameter
Test Con ditions
Latching Current
V CLAMP = 250 V
R GOF F = 1 KΩ
Functional Test
Open Secondary Coil
R GOF F=1 KΩ L =3 mH
R GOF F=1 KΩ L =3 mH
Min.
Typ.
V GE = 4.5 V
TC = 150 o C
80
T C = 25 o C
TC = 150 o C
21.6
15
26
18
Min.
Typ.
Max.
Unit
A
A
A
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
Parameter
Test Con ditions
Max.
Unit
Delay Time
Rise Time
V CC = 250 V
V GE = 4.5 V
I C = 20 A
R G = 1 KΩ
2.3
0.6
µs
µs
Turn-on Current Slope
V CC = 250 V
R G = 1 KΩ
I C = 20 A
V GE = 4.5 V
550
A/µs
Turn-on
Switching Losses
V CC =250V
I C =20A
R G =1 KΩ V GE =4.5V
8.8
9.2
mJ
mJ
T C = 25 o C
TC = 150 o C
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
tf
td (o ff )
E o ff(**)
Cross-O ver Time
V CC = 250 V
Off Voltage Rise Time R GE = 1 KΩ
Fall T ime
Off Voltage Delay Time
Turn-off Switching Loss
I C = 20 A
V GE = 4.5 V
4.8
2.6
2.0
11.5
11.8
µs
µs
µs
µs
mJ
tc
t r (v off )
tf
td (o ff )
E o ff(**)
Cross-O ver Time
V CC = 250 V
Off Voltage Rise Time R GE = 1 KΩ
Fall T ime
T C = 150 oC
Off Voltage Delay Time
Turn-off Switching Loss
I C = 20 A
V GE = 4.5 V
7.8
3.5
3.9
12.0
17.8
µs
µs
µs
µs
mJ
(•) Pulse width limited by safe operating area
(*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**)Losses Include Also The Tail (jedec Standardization)
3/6
STGB20NB37LZ
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
4/6
STGB20NB37LZ
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
C2
A2
A
C
DETAIL”A”
DETAIL ”A”
A1
B2
E
B
G
L2
L
L3
P011P6/E
5/6
STGB20NB37LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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6/6
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