STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT TYPE STGD3NB60SD ■ ■ ■ ■ ■ VCES VCE(sat) IC 600 V < 1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT 3 1 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOTOR CONTROL ■ GAS DISCHARGE LAMP ■ STATIC RELAYS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGD3NB60SDT4 GD3NB60SD DPAK TAPE & REEL May 2004 1/9 STGD3NB60SD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 6 A IC Collector Current (continuous) at TC = 100°C 3 A Collector Current (pulsed) 25 A Total Dissipation at TC = 25°C 48 W ICM () PTOT Derating Factor Tstg Tj Storage Temperature 0.32 W/°C – 65 to 175 °C 175 °C Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 3.125 °C/W 100 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Test Conditions Min. Typ. Max. 600 Unit Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 V Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 10 µA VCE = Max Rating, TC = 125 °C 100 µA Gate-Emitter Leakage Current (VCE = 0) VGE = ±20V , VCE = 0 ±100 nA Max. Unit 4.5 V 1 1.2 1.1 1.5 V V V Min. Typ. Max. Unit 1.7 2.5 S 255 pF ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 1.5 A VGE = 15V, IC = 3 A VGE = 15V, IC = 7 A, TJ =125 °C Min. Typ. 2.5 DYNAMIC Symbol gfs Forward Transconductance Test Conditions VCE = 10 V , IC = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Cies Input Capacitance Coes Output Capacitance 30 pF Cres Reverse Transfer Capacitance 5.6 pF QG QGE QGC Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480 V, IC = 3 A, VGE = 15V Latching Current Vclamp = 380 V , Tj = 25°C RG = 1KΩ ICL 2/9 Parameter 18 5.4 5.5 15 23 nC nC nC A STGD3NB60SD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 1KΩ , VGE = 15 V 125 150 µs µs Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A, RG=1KΩ VGE = 15 V, Tj = 125°C 50 1100 A/µs µJ SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. tc tr(Voff) td(on) tf Eoff(**) Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 3 A, RGE = 1KΩ , VGE = 15 V 1.8 1.0 3.4 0.72 1.15 tc tr(Voff) td(on) tf Eoff(**) Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 3 A, RGE = 1KΩ , VGE = 15 V, Tj = 125°C 2.8 1.45 3.6 1.2 1.8 Max. Unit µs µs µs µs mJ µs µs µs µs mJ COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 3 A If = 1 A 1.55 1.15 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A ,VR = 200 V, Tj =125°C, di/dt = 100A/µs 1700 4500 9.5 trr Qrr Irrm Max. Unit 3 25 A A 1.9 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**) Losses also include the Tail (Jedec Standardization) Thermal Impedance 3/9 STGD3NB60SD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature 4/9 STGD3NB60SD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Collector Current Off Losses vs Temperature Switching Off Safe Operating Area 5/9 STGD3NB60SD Diode Forward Voltage vs Tj Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 6/9 STGD3NB60SD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/9 STGD3NB60SD DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 B1 D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.059 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 8/9 inch 0.641 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STGD3NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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