STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D PAK/I PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE V DSS R DS(on) ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(**) 120 A(**) STB210NF02/-1 STP210NF02 ■ ■ ■ TYPICAL RDS(on) = 0.0026Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 3 3 12 1 I PAK TO-262 D PAK TO-263 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB210NF02 STB210NF02T4 STP210NF02 STB210NF02-1 MARKING B210NF02 B210NF02 P210NF02 B210NF02 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Drain-source Voltage (VGS = 0) V DS Drain-gate Voltage (RGS = 20 kΩ) V DGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM(•) Drain Current (pulsed) Total Dissipation at TC = 25°C Ptot Derating Factor Peak Diode Recovery voltage slope dv/dt (1) E AS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (•) Pulse width limit ed by safe operating area. (**) Current Limited by Package October 2002 . PACKAGE D2PAK D2PAK TO-220 I2 PAK PACKAGING TUBE TAPE & REEL TUBE TUBE Value 20 20 ± 20 120 120 480 300 2.0 1 2.3 Unit V V V A A A W W/°C V/ns J -55 to 175 °C (1) ISD ≤120A, di/dt ≤250A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V 1/14 STB210NF02/-1 STP210NF02 THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Max Typ 0.5 62.5 see curve on page 6 300 °C/W °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS VGS = 0 Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 2.6 3.2 mΩ Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V ID = 50 A Min. Typ. 2 DYNAMIC Symbol 2/14 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 10 V C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, f = 1 MHz, VGS = 0 ID = 50 A Min. 130 S 5100 3500 800 pF pF pF STB210NF02/-1 STP210NF02 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V ID = 60 A VGS = 10 V R G = 4.7 Ω (Resistive Load, Figure 3) 35 360 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =10V ID =120A VGS=10V 125 40 50 150 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 10 V ID = 60 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) 75 110 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 120 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A di/dt = 100A/µs T j = 150°C VDD = 15 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 70 120 3.5 Max. Unit 120 480 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/14 STB210NF02/-1 STP210NF02 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/14 STB210NF02/-1 STP210NF02 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. Power Derating vs Tc . .Max Id Current vs Tc 5/14 STB210NF02/-1 STP210NF02 Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area Allowable Iav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 oC, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Z th) Where: Z th = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV . 6/14 STB210NF02/-1 STP210NF02 SPICE THERMAL MODEL Node Value CTHERM1 5-4 0.011 CTHERM2 4-3 0.0012 CTHERM3 3-2 0.05 CTHERM4 2-1 0.1 RTHERM1 5-4 0.09 RTHERM2 4-3 0.02 RTHERM3 3-2 0.11 RTHERM4 2-1 0.17 Parameter 7/14 STB210NF02/-1 STP210NF02 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 3.1: Switching Time Waveform Fig. 4: Gate Charge Test Circuit Fig. 4.1: Gate Charge Test Waveform 8/14 STB210NF02/-1 STP210NF02 Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform 9/14 STB210NF02/-1 STP210NF02 D PAK MECHANICAL DATA DIM. 10/14 MIN. mm. TYP. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.7 0.23 0.93 0.001 0.028 0.009 0.037 B2 C 1.14 0.45 1.7 0.6 0.045 0.018 0.067 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 E 10 10.4 0.394 E1 G 8.5 4.88 5.28 8 0.315 0.409 0.334 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 M 1.4 2.4 1.75 3.2 0.055 0.094 0.069 0.126 R V2 0° 8° 0° 0.4 0.016 8° STB210NF02/-1 STP210NF02 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 11/14 STB210NF02/-1 STP210NF02 TO-220 MECHANICAL DATA DIM. MIN. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D E 2.40 0.49 2.72 0.70 0.094 0.019 0.107 0.027 F F1 0.61 1.14 0.88 1.70 0.024 0.044 0.034 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 H2 2.40 10 2.70 10.40 0.094 0.393 0.106 0.409 L2 L3 12/14 mm. TYP. 16.40 28.90 0.645 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 L7 15.25 6.20 15.75 6.60 0.600 0.244 0.620 0.260 L9 DIA 3.50 3.75 3.93 3.85 0.137 0.147 0.154 0.151 STB210NF02/-1 STP210NF02 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/14 STB210NF02/-1 STP210NF02 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 14/14