ETC STPS2L30

STPS2L30A
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2A
VRRM
30 V
Tj (max)
150 °C
VF (max)
0.375 V
FEATURES AND BENEFITS
n
n
n
n
LOW COST DEVICE WITH LOW DROP
FORWARD VOLTAGE FOR LESS POWER
DISSIPATION.
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE
HIGHEST YIELD IN THE APPLICATIONS.
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE.
AVALANCHE CAPABILITY SPECIFIED
SMA
JEDEC DO-214AC
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA, this device is especially
intended for use in parallel with MOSFETs in
synchronous rectification.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward current
10
A
IF(AV)
Average forward current
TL = 120°C δ = 0.5
2
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
1
A
PARM
Repetitive peak avalanche power
tp = 1µs
1500
W
- 65 to + 150
°C
150
°C
Tstg
Tj
Storage temperature range
Maximum operating junction temperature *
Tj = 25°C
dV/dt
Critical rate of rise of reverse voltage
10000
dPtot
1
thermal runaway condition for a diode on its own heatsink
* :
<
dTj
Rth( j − a )
July 2003 - Ed: 3A
V/µs
1/5
STPS2L30A
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-l)
Junction to lead
Value
Unit
30
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Tests Conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 100°C
VF *
Forward voltage drop
Tj = 25°C
Unit
200
µA
15
mA
0.45
V
6
IF = 2 A
Tj = 125°C
Tj = 25°C
Max.
0.325
0.375
IF = 4 A
0.53
Tj = 125°C
0.43
0.51
* tp = 380 µs, δ < 2%
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.24 x IF(AV) + 0.068 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
1.2
1.0
0.8
PF(av)(W)
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
δ=1
0.6
0.4
T
0.2
tp
δ=tp/T
IF(av) (A)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
2/5
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=120°C/W
T
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
STPS2L30A
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
0
1.0
8
0.8
0.6
Ta=25°C
4
50
75
100
125
Ta=50°C
0.4
Ta=100°C
0.2
Zth(j-a)/Rth(j-a)
δ = 0.5
T
δ = 0.2
2
IM
δ = 0.1
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
150
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
10
6
25
0.0
1E-2
1E-1
δ=tp/T
tp(s)
Single pulse
1E+0
1E+1
tp
1E+2
5E+2
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
IR(mA)
500
1E+2
F=1MHz
Tj=25°C
Tj=150°C
1E+1
Tj=125°C
1E+0
Tj=100°C
100
1E-1
Tj=25°C
1E-2
VR(V)
VR(V)
1E-3
0
5
10
15
20
25
30
10
1
2
5
10
20
30
3/5
STPS2L30A
Fig. 9-1: Forward voltage drop versus forward
current (maximum values, high level).
10.00
Fig. 9-2: Forward voltage drop versus forward
current (typical values, low level).
IFM(A)
10.00
IFM(A)
Tj=125°C
Tj=150°C
Typical values
Tj=150°C
1.00
Tj=125°C
Tj=25°C
Tj=25°C
1.00
0.10
Tj=100°C
VFM(V)
VFM(V)
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Fig. 9-3: Forward voltage drop versus forward
current (maximum values, low level).
0.10
0.0
0.2
0.3
0.4
0.5
0.6
0.7
Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Rth(j-a) (°C/W)
IFM(A)
3.0
Typical values
Tj=150°C
2.5
140
Tj=25°C
Tj=125°C
2.0
0.1
120
100
Tj=100°C
1.5
80
60
1.0
0.5
VFM(V)
0.0
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
4/5
40
20
0
S(Cu) (cm²)
0
1
2
3
4
5
STPS2L30A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
E1
REF.
D
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
E
A1
A2
C
L
b
FOOT PRINT DIMENSIONS (in millimeters)
1.65
1.45
n
n
2.40
1.45
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS2L30A
G30
SMA
0.068g
5000
Tape & reel
BAND INDICATES CATHODE
EPOXY MEETS UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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