STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 450 V 450 V < 4.5 Ω < 4.5 Ω 1.5 A 0.5 A 30 W 3.1 W TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 2 1 IPAK TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STD2NC45-1 D2NC45 IPAK TUBE STQ1NC45 Q1NC45 TO-92 BULK STQ1NC45-AP Q1NC45 TO-92 AMMOPAK June 2003 1/11 STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STD2NC45-1 VDS VDGR VGS Unit STQ1NC45 Drain-source Voltage (VGS = 0) 450 V Drain-gate Voltage (RGS = 20 kΩ) 450 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 1.5 0.5 ID Drain Current (continuos) at TC = 100°C IDM () PTOT 0.95 0.315 A Drain Current (pulsed) 6 2 A Total Dissipation at TC = 25°C 30 3.1 W 0.24 0.025 W/°C Derating Factor dv/dt (1) Tj Tstg A Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 3 V/ns -65 to 150 -65 to 150 °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. THERMAL DATA IPAK TO-92 Rthj-case Thermal Resistance Junction-case Max 4.1 Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W 275 260 °C Tl Maximum Lead Temperature For Soldering Purpose °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value IPAK 2/11 Unit TO-92 IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ STD2NC45-1, STQ1NC45 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A V(BR)DSS Min. Typ. Max. 450 2.3 Unit V 1 50 µA µA ±100 nA 3 3.7 V 4.1 4.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 0.5 A 1.1 VDS = 25V, f = 1 MHz, VGS = 0 S pF pF pF 160 27.5 4.7 SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 225 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 6.7 4 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 360V, ID = 1.5 A, VGS = 10V, RG = 4.7Ω 7 1.3 3.2 10 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 360V, ID = 1.5 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 8.5 12 18 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.5 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 225 530 4.7 Max. Unit 1.5 6.0 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/11 STD2NC45-1, STQ1NC45 Safe Operating Area For IPAK Thermal Impedance For IPAK Safe Operating Area For TO-92 Thermal Impedance For TO-92 Output Characteristics Transfer Characteristics 4/11 STD2NC45-1, STQ1NC45 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STD2NC45-1, STQ1NC45 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id Current vs Tc Maximum Avalanche Energy vs Temperature 6/11 STD2NC45-1, STQ1NC45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STD2NC45-1, STQ1NC45 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 8/11 STD2NC45-1, STQ1NC45 TO-92 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 9/11 STD2NC45-1, STQ1NC45 10/11 STD2NC45-1, STQ1NC45 Information furnished is believed to be accurate and reliable. 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