STS2DPF20V DUAL P-CHANNEL 20V - 0.14Ω - 2A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET PRELIMINARY DATA ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS2DPF20V 20 V <0.20Ω (@4.5V) <0.25Ω (@2.7V) 2A TYPICAL RDS(on) = 0.14Ω (@4.5V) TYPICAL RDS(on) = 0.2Ω (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT ■ POWER MANAGMENT IN CELLULAR PHONES MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM (●) PTOT Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V Gate- source Voltage ± 12 V Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation 2 1.26 A A 8 A 1.6 2 W W Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation (●)Pulse width limited by safe operating area. August 2001 Note: For the P-CHANNEL MOSFET actual polarity of Voltages and current has to be reversed 1/6 STS2DPF20V THERMAL DATA Rthj-amb Tstg Tj (*)Thermal Resistance Junction-ambient Single Operation Dual Operation 62.5 78 °C/W °C/W Storage Temperature -55 to 150 °C Junction-ambient Temperature -55 to 150 °C (*) When Mounted on 0.5 in² of 2 oz. Copper MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 20 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 12 V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V, ID = 1 A 0.14 0.20 Ω VGS = 2.7 V, ID = 1 A 0.20 0.25 Ω Typ. Max. Unit 0.6 V DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS = 15 V, ID = 1.5 A VDS = 15V, f = 1 MHz, VGS = 0 Min. 4.5 S 315 pF Ciss Input Capacitance Coss Output Capacitance 87 pF Crss Reverse Transfer Capacitance 17 pF STS2DPF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 10 V, ID = 1.5A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 1) VDD = 10V, ID = 2 A, VGS = 4.5 V (see test circuit, Figure 2) Typ. Max. Unit 38 ns 30 ns 3.8 4.8 nC 0.34 nC 0.8 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 10 V, ID = 1 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 1) Typ. Max. 45 11 Unit ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 2 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 2 A, di/dt = 100A/µs, VDD = 10 V, Tj = 150°C (see test circuit, Figure 3) IRRM Reverse Recovery Current Max. Unit 2 A 8 A 1.2 V 15 ns 7.5 nC 1 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STS2DPF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit STS2DPF20V SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 5/6 STS2DPF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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