STMICROELECTRONICS STS4DPFS20L

STS4DPFS20L
P-CHANNEL 20V - 0.07Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
VDSS
RDS(on)
ID
20 V
< 0.08 Ω
4A
IF(AV)
VRRM
VF(MAX)
3A
30 V
0.51 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM (●)
PTOT
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
± 16
V
Drain Current (continuos) at TC = 25°C
4
A
Gate- source Voltage
Drain Current (continuos) at TC = 100°C
3.4
A
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C
2
W
Value
Unit
Repetitive Peak Reverse Voltage
30
V
RMS Forward Current
20
A
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
IF(RMS)
Parameter
IF(AV)
Average Forward Current
TL = 125°C
δ = 0.5
3
A
IFSM
Surge Non Repetitive Forward Current
tp = 10 ms
Sinusoidal
75
A
IRRM
Repetitive Peak Reverse Current
tp = 2 µs
F = 1 kHz
1
A
IRSM
Non Repetitive Peak Reverse Current
tp = 100 µs
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•)Pulse width limited by safe operating area
April 2002
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
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STS4DPFS20L
THERMAL DATA
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
62.5
°C/W
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY
100
°C/W
Tstg
Tl
Storage Temperature Range
-55 to 150
°C
150
°C
Junction Temperature
(*) Mounted on FR-4 board (Steady State)
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2 A
0.07
0.08
Ω
VGS = 4.5V, ID = 2 A
0.085
0.10
Ω
Typ.
Max.
Unit
1
V
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Forward Transconductance
Test Conditions
VDS= 15V, ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
10
S
1350
pF
Ciss
Input Capacitance
Coss
Output Capacitance
490
pF
Crss
Reverse Transfer
Capacitance
130
pF
STS4DPFS20L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 15V, ID = 2A RG = 4.7Ω
VGS = 10V
(see test circuit, Figure 3)
VDD = 24V, ID = 4A,
VGS = 4.5 V
Typ.
Max.
Unit
25
ns
35
ns
12.5
16
nC
5
nC
3
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 15 V, ID = 2A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
Typ.
Max.
125
30
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 4 A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Reverse Recovery Current
Max.
Unit
4
A
16
A
1.2
V
45
ns
36
nC
1.6
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
IR(*)
VF(*)
Parameter
Reversed Leakage Current
Forward Voltage Drop
Typ.
Max.
Unit
TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
Test Conditions
Min.
0.03
0.2
100
mA
mA
TJ = 25 °C , IF = 3 A
TJ = 125 °C , IF = 3 A
0.46
0.51
0.46
V
V
3/8
STS4DPFS20L
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
4/8
Static Drain-source On Resistance
STS4DPFS20L
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS4DPFS20L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS4DPFS20L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
7/8
STS4DPFS20L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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