STMICROELECTRONICS STS4DPFS2LS

STS4DPFS2LS
P-CHANNEL 20V - 0.06Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
VDSS
RDS(on)
ID
20 V
< 0.07 Ω
4A
IF(AV)
VRRM
VF(MAX)
3A
40 V
0.44 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
± 20
V
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
4
A
ID
Drain Current (continuos) at TC = 100°C
3.4
A
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C
2
W
Single Pulse Avalanche Energy
20
mJ
Value
Unit
IDM (●)
PTOT
EAS (1)
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
IF(RMS)
Parameter
Repetitive Peak Reverse Voltage
40
V
RMS Forward Current
10
A
IF(AV)
Average Forward Current
TL = 120°C
δ = 0.5
3
A
IFSM
Surge Non Repetitive Forward Current
tp = 10 ms
Sinusoidal
75
A
IRRM
Repetitive Peak Reverse Current
tp = 2 µs
F = 1 kHz
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, I D = 2.5 A, VDD = 20 V
February 2001
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
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STS4DPFS2LS
THERMAL DATA
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
62.5
°C/W
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY
100
°C/W
Tstg
Tl
Storage Temperature Range
-55 to 150
°C
150
°C
Junction Temperature
(*) Mounted on FR-4 board (Steady State)
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2.5 A
ID(on)
On State Drain Current
Min.
Typ.
Max.
Unit
1
1.6
2.5
V
0.06
0.07
Ω
0.07
0.085
VGS = 4.5V, ID = 2.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
16
A
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
5
S
1350
pF
Ciss
Input Capacitance
Coss
Output Capacitance
490
pF
Crss
Reverse Transfer
Capacitance
130
pF
STS4DPFS2LS
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 15V, ID = 3A RG = 4.7Ω
VGS = 10V
(see test circuit, Figure 3)
VDD = 24V, ID = 6A,
VGS = 4.5 V
Typ.
Max.
Unit
25
ns
35
ns
12.5
16
nC
5
nC
3
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V, ID = 2A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
125
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 24 V, ID = 6 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
83
40
75
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
4
A
ISDM (2)
Source-drain Current (pulsed)
16
A
VSD (1)
Forward On Voltage
ISD = 4 A, VGS = 0
1.2
V
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
ISD
Parameter
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Test Conditions
Min.
Typ.
45
ns
36
nC
1.6
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current
TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ =
TJ =
TJ =
TJ =
TJ =
TJ =
25 °C , IF = 1 A
125 °C , IF = 1 A
25 °C , IF = 2 A
125 °C , IF = 2 A
25 °C , IF = 3 A
125 °C , IF = 3 A
Min.
Typ.
Max.
Unit
14
8
50
18
µA
mA
0.37
0.28
0.41
0.34
0.42
0.32
0.46
0.39
0.5
0.44
V
V
V
V
V
V
0.4
3/8
STS4DPFS2LS
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
4/8
Static Drain-source On Resistance
STS4DPFS2LS
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS4DPFS2LS
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS4DPFS2LS
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
7/8
STS4DPFS2LS
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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