STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh™ MOSFET Table 1: General Features TYPE STW30NM60D ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 600 V < 0.145 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE RATED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE FAST INTERNAL RECOVERY DIODE TO-247 DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Figure 2: Internal Schematic Diagram APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ■ Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STW30NM60D W30NM60D TO-247 TUBE Rev. 3 June 2004 1/9 STW30NM60D Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 30 A ID Drain Current (continuous) at TC = 100°C 18.9 A IDM () PTOT dv/dt (1) Tj Tstg Drain Current (pulsed) 120 A Total Dissipation at TC = 25°C 312 W Derating Factor 2.5 W/°C 20 V/ns -55 to 150 -55 to 150 °C °C Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤30A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 0.4 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 15 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 740 mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C 10 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 15 A 0.125 0.145 Ω 2/9 600 Unit V(BR)DSS 3 V STW30NM60D Table 7: Dynamic Symbol gfs (1) Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS = 15 V , ID = 15 A 16 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2520 800 75 pF pF pF Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 480 V 390 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 300 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) 32 33 75 35 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480 V, ID = 30 A, VGS = 10 V (see Figure 18) 82 24 42 115 nC nC nC Typ. Max. Unit 30 120 A A 1.5 V Ciss Coss Crss COSS eq (3). Table 8: Source Drain Diode Symbol Parameter Test Conditions Min. ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 30 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A, di/dt = 100 A/µs VDD = 50V (see Figure 16) 165 1.1 14 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A, di/dt = 100 A/µs VDD = 50V, Tj = 150°C (see Figure 16) 312 3.3 21 ns nC A trr Qrr IRRM trr Qrr IRRM (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/9 STW30NM60D Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STW30NM60D Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics 5/9 STW30NM60D Figure 14: Unclamped Inductive Load Test Circuit Figure 17: Unclamped Inductive Wafeform Figure 15: Switching Times Test Circuit For Resistive Load Figure 18: Gate Charge Test Circuit Figure 16: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/9 STW30NM60D TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 7/9 STW30NM60D Table 9: Revision History Date Revision 24-June-2004 3 Description of Changes The document change from “ADVANCED” to “COMPLETE”. New Stylesheet. Rds(on) Max@10V changed. See Table 6. 8/9 STW30NM60D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 9/9