X00602MA ® 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... KG A TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180° conduction angle) Value Unit Tl = 85°C 0.8 A Tl = 85°C 0.5 A IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10ms Tj = 25°C 0.25 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1 A Tj = 125°C 0.1 W - 40 to + 125 - 40 to + 125 °C I ²t PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range January 2002 - Ed: 5 10 Tj = 25°C tp = 10 ms A 9 1/5 X00602MA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT Test Conditions RL = 140 Ω VD = 12 V VGT X00602MA Unit MIN. 15 µA MAX. 200 µA MAX. 0.8 V MIN. 0.2 V MIN. 5 V VGD VD = VDRM VRG IRG = 10 µA IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA Tj = 125°C MIN. 25 V/µs Tj = 25°C MAX. 1.35 V MAX. 0.85 V RL = 3.3 kΩ RGK = 1 kΩ dV/dt VD = 67 % VDRM VTM ITM = 1 A Vt0 Threshold voltage Tj = 125°C Rd Dynamic resistance Tj = 125°C MAX. 245 mΩ Tj = 25°C MAX. 1 µA IDRM IRRM RGK = 1 kΩ Tj = 125°C tp = 380 µs VDRM = VRRM RGK = 1 kΩ Tj = 125°C 100 THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to lead (DC) Rth(j-a) Junction to ambient (DC) Value Unit 70 °C/W 150 °C/W PRODUCT SELECTOR Part Number X00602MA Voltage Sensitivity Package 600 V 200 µA TO-92 ORDERING INFORMATION X 006 02 M A SENSITIVE SCR SERIES VOLTAGE: M: 600V CURRENT: 0.8A Blank 1AA2 PACKING MODE: 1AA2: Bulk 2AL2: Ammopack 5AL2: Tape & reel PACKAGE: A: TO-92 SENSITIVITY: 02: 200µA OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode X00602MA 1AA2 X0602MA 0.2 g 2500 Bulk X00602MA 2AL2 X0602MA 0.2 g 2000 Ammopack X00602MA 5AL2 X0602MA 0.2 g 2000 Tape & reel 2/5 X00602MA Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. P(W) IT(av)(A) 0.65 0.60 α = 180° 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.1 360° α IT(av)(A) 0.2 0.3 0.4 0.5 0.6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 D.C. α = 180° Tlead(°C) 0 50 75 100 125 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] IT(av)(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 25 1.00 D.C. α = 180° 0.10 Tamb(°C) 0 25 50 tp(s) 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. 0.01 1E-2 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] 3.5 1.6 1.4 3.0 1.2 2.5 1.0 2.0 0.8 IH & IL 0.6 1.5 IGT 1.0 0.4 0.2 0.0 -40 1E-1 0.5 Tj(°C) -20 0 20 40 60 80 100 120 140 0.0 1E-2 Rgk(kΩ) 1E-1 1E+0 1E+1 1E+2 3/5 X00602MA Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1kΩ] dV/dt[Cgk]/dV/dt[Rgk=1kΩ] 1E+2 20 1E+1 10 5 1E+0 1E-1 2 Rgk(kΩ) 1E-2 1E-2 1E-1 Cgk(nF) 1E+1 1E+0 Fig. 8: Surge peak on-state current versus number of cycles. 10 9 8 7 6 5 4 3 2 1 0 5 2 10 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A),I 2t(A2s) ITSM(A) 100.0 ITSM Tj initial = 25 °C tp=10ms Onecycle 10.0 Nonrepetitive Tjinitial=25°C Repetitive Tamb=25°C 1.0 I2t Number of cycles 1 10 100 1000 Fig. 10: On-state characteristics (maximum values). ITM(A) 1E+1 Tj max.: Vto = 0.85V Rd = 245mΩ 1E+0 Tj = Tjmax. Tj = 25°C 1E-1 VTM(V) 1E-2 0.5 4/5 1 1 1.0 1.5 2.0 2.5 3.0 3.5 tp(ms) 0.1 0.01 0.10 1.00 10.00 X00602MA PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. A Min. a B C F D E Millimeters A B C D E F a Typ. Max. Inches Min. 1.35 Typ. Max. 0.053 4.70 0.185 2.54 0.100 4.40 12.70 0.173 0.500 3.70 0.50 0.146 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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