KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC PC TJ TSTG Ratings - 180 Units V - 180 V -5 V - 100 mA Collector Dissipation (Ta=25°C) 1.2 W Collector Dissipation (TC=25°C) 8 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 180V, IE = 0 Min. Typ. IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 5V, IC = - 1mA VCE = - 5V, IC = - 10mA VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) fT 90 100 200 200 320 IC = - 50mA, IB = - 5mA - 0.16 - 0.5 * Base-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.8 - 1.5 Current Gain Bandwidth Product VCE = - 10V, IC = - 20mA 180 4.5 Cob Output Capacitance VCB = - 10V, IE = 0, f=1MHz NF Noise Figure VCE = - 10V, IC = - 1mA RS = 10kΩ, f = 1MHz Max. -1 Units µA -1 µA V V MHz 7 4 pF dB * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification O Y hFE2 100 ~ 200 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1142 Typical Characteristics -160 1000 VCE = -5V Pulse Test -120 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT Pulse Test -140 IB = -500㎂ IB = -450㎂ I = -400㎂ B -100 IB = -350㎂ 0㎂ IB = -30 ㎂ 0 -25 = IB -80 -60 IB = -200㎂ IB = -150㎂ IB = -100㎂ -40 -20 100 10 IB = -50㎂ IB = 0 0 0 -20 -40 -60 -80 -100 -120 -140 1 -0.1 -160 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 -10 IC = 10 IB Pulse Test Cob(PF)Cib(PF),CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain V BE(sat) -0.1 VCE(sat) f=1.0MHz IE=0(COB) IE=0(CIB) Cib 10 Cob 1 -0.01 0.1 1 10 -1 100 -10 -100 -1000 VCB(v), COLLECTOR-BASE VOLTAGE VCB(v), EMITTER-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance -1000 1000 d b S/ mite Li -10 VCEO MAX. 10 10ms -1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International ms =1 PW 100 IC (DC) Max. -100 s) 0m (5 C D n tio pa si is ited m Li IC[mA], COLLECTOR CURRENT VCE = -10V D fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT -100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic -1 -10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSA1142 Typical Characteristics (Continued) 160 10 PC[W], POWER DISSIPATION 140 dT(%),IcDERATING 120 100 S/b 80 Di ss 60 40 ip a Lim ited tio n Li m ite d 20 0 8 6 4 2 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 50 100 150 200 250 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSA1142 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E