CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an P-Channel Enhancement-mode Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: F APPLICATIONS: • Load/Power Switches • DC/DC Converters • Battery Powered Portable Equipment FEATURES: • 100mW Power Dissipation • 0.4mm Low Package Profile • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS VGS ID ID PD TJ, Tstg SOT-883L CASE ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF IGSSR IDSS BVDSS VGS(th) VGS=10V, VDS=0 VGS=10V, VDS=0 VDS=20V, VGS=0 VGS=0, ID=100μA MAX UNITS 1.0 μA 1.0 μA 1.0 μA 1.1 V 8.0 Ω Ω 20 V rDS(ON) VDS=VGS, VGS=4.0V, rDS(ON) VGS=2.5V, ID=10mA 12 rDS(ON) VGS=1.5V, ID=1.0mA VDS=10V, ID=100mA 45 gfs Crss ID=250μA ID=10mA UNITS V V mA mA mW °C 20 10 100 200 100 -65 to +150 0.6 100 Ω mS VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz 15 pF 45 pF 15 pF ton VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA 35 ns toff VDD=3.0V, VGS=2.5V, ID=10mA 80 ns Ciss Coss R5 (5-August 2010) CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN MARKING CODE: F R5 (5-August 2010) w w w. c e n t r a l s e m i . c o m