CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE: C7003 APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • ESD protection up to 2kV • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IDM PD TJ, Tstg ΘJA SOT-23 CASE ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=5.0V IGSSF, IGSSR VGS=10V IGSSF, IGSSR VGS=12V IDSS VDS=50V, VGS=0 BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=115mA rDS(ON) VGS=1.8V, ID=50mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA gFS VDS=10V, ID=200mA Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz UNITS V V V mA A mW °C °C/W 50 50 12 280 1.5 350 -65 to +150 357 otherwise noted) MIN TYP 50 0.49 1.6 1.3 1.1 MAX 100 2.0 2.0 50 1.0 1.4 3.0 2.5 2.0 200 5.0 50 25 UNITS nA μA μA nA V V V Ω Ω Ω mS pF pF pF R1 (27-January 2010) CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C7003 R1 (27-January 2010) w w w. c e n t r a l s e m i . c o m