CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate charge. MARKING CODE: C503 SOIC-8 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (83mΩ MAX @ VGS=5.0V) • High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 30 UNITS V 16 V Continuous Drain Current (Steady State) ID 5.3 A Maximum Pulsed Drain Current, tp=10μs IDM PD 21.2 A 2.0 W TJ, Tstg ΘJA -55 to +150 °C 62.5 °C/W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=30V, VGS=0 1.0 BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VGS=0, ID=250μA VGS=VDS, ID=250μA 30 μA V 1.0 VGS=10V, ID=2.7A VGS=5.0V, ID=2.7A UNITS nA 3.0 V 0.066 0.072 Ω 0.077 0.083 Ω VDS=5.0V, ID=5.3A VDS=10V, VGS=0, f=1.0MHz 11 50 60 pF VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz 500 590 pF 60 150 pF VDD=15V, VDD=15V, ID=5.3A 4.7 7.0 nC ID=5.3A VDD=15V, VGS=5.0V, ID=5.3A VDD=15V, ID=5.3A, RG=10Ω VDD=15V, ID=5.3A, RG=10Ω 1.4 2.1 nC 1.7 2.5 nC VGS=5.0V, VGS=5.0V, S 7.0 ns 8.0 ns R2 (23-August 2012) CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOIC-8 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Source Q2 4) Gate Q2 5) 6) 7) 8) Drain Drain Drain Drain Q2 Q2 Q1 Q1 MARKING CODE: C503 R2 (23-August 2012) w w w. c e n t r a l s e m i . c o m