CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package. Common drain and emitter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation VDSX VGDS IG ID PD Mounted on a ceramic board (600mm2✕0.8mm) 15 V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO 55 V Collector-to-Emitter Voltage 50 V Emitter-to-Base Voltage VEBO 6 Collector Current V IC 150 mA Collector Current (Pulse) ICP 300 mA Base Current IB PC 30 mA 350 mW Collector Dissipation Mounted on a ceramic board (600mm2✕0.8mm) [Common Ratings] Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg Mounted on a ceramic board (600mm2✕0.8mm) 500 mW 150 °C --55 to +150 °C Marking : 1A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705 No.8278-1/6 CPH5901 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS Gate Cutoff Current IGSS Cutoff Voltage VGS(off) IDSS Drain Current Forward Transfer Admittance Input Capacitance ⏐yfs⏐ Ciss Reverse Transfer Capacitance Crss Noise Figure NF IG=--10μA, VDS=0V VGS=--10V, VDS=0V --15 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.2 V --1.0 --0.6 6.0* 25 nA --1.4 V 20.0* mA 50 mS VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz 10 pF 3.0 pF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB [TR] Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=35V, IE=0A VEB=4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=6V, IC=1mA VCE=6V, IC=10mA Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 135 0.1 μA 0.1 μA 400 200 VCB=6V, f=1MHz IC=50mA, IB=5mA MHz 1.7 IC=50mA, IB=5mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A pF 0.08 0.4 V 0.8 1.0 V 55 V 50 V Turn-ON Time V(BR)EBO ton Storage Time tstg See specified Test Circuit. 0.75 μs tf See specified Test Circuit. 0.20 μs Fall Time 6 V See specified Test Circuit. 0.15 μs * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank F G IDSS 6.0 to 12.0 10.0 to 20.0 Package Dimensions unit : mm 7017-007 Electrical Connection 5 0.2 2.8 1.6 0.05 1 2 Top view 0.6 1 1 : Collector 2 : Gate 3 : Source 4 : Emitter / Drain 5 : Base 3 0.6 4 3 0.15 0.4 5 4 2 0.95 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base 0.7 0.9 0.2 2.9 SANYO : CPH5 Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 OUTPUT INPUT VR 50Ω RB + 220μF VBE= --5V RL + 470μF VCC=20V 10IB1= --10IB2= IC=10mA No.8278-2/6 CPH5901 ID -- VDS 16 ID -- VDS [FET] 20 [FET] VGS=0V 16 Drain Current, ID -- mA 12 10 --0.1V 8 --0.2V 6 4 --0.3V --0.6V 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS -- V [FET] A 0m =2 S mA I DS 15 A m 10 A 6m 0 --0.2 Gate-to-Source Voltage, VGS -- V 10 A 6m S= I DS 3 20m 2 10 7 5 3 1.0 [FET] 7 5 3 2 5 7 2 10 3 ⏐yfs⏐ -- IDSS 100 5 ITR10332 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 2 10 Drain Current, ID -- mA Ciss -- VDS 3 3 3 5 5 7 7 5 3 2 1.0 3 Crss -- VDS [FET] 10 2 10 Drain Current, IDSS -- mA ITR10333 VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF 10 ITR10330 Drain Current, IDSS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS A 10m 8 VDS=5V ID=100μA 3 10 Reverse Transfer Capacitance, Crss -- pF Forward Transfer Admittance, ⏐yfs⏐ -- mS A 5 6 --0.1 [FET] 7 4 --1.0 0 VDS=5V f=1kHz --0.4V --0.5V VGS(off) -- IDSS ITR10331 ⏐yfs⏐ -- ID 100 2 2 40 0 --0.4 --0.3V Drain-to-Source Voltage, VDS -- V 20 --0.6 --0.2V 0 30 --0.8 8 ITR10329 VDS=5V --1.0 --0.1V 2.0 ID -- VGS --1.2 12 --0.6V Cutoff Voltage, VGS(off) -- V 0 0 VGS=0V 4 --0.4V --0.5V 2 Drain Current, ID -- mA Drain Current, ID -- mA 14 5 ITR10334 [FET] VGS=0V f=1MHz 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10335 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10336 No.8278-3/6 CPH5901 NF -- f 14 =5 12 kΩ 0 10 2 8 6 4 mA 10 10 10 A 3m Ω 00 Ω 1k 4 2 5 100 2 5 2 1k 5 10k 2 PD -- Ta 400 0 10 5 100k 2 5 1M ITR10337 Frequency, f -- Hz [FET] VDS=5V Rg=1kΩ A 1m I D= 8 2 Allowable Power Dissipation, PD -- mW 14 Noise Figure, NF -- dB 10 Rg Noise Figure, NF -- dB 12 6 NF -- f [FET] VDS=5V ID=10mA 2 5 100 2 5 1k 2 5 10k 2 5 100k 2 5 1M ITR10338 Frequency, f -- Hz [FET] 350 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m 50 m ) 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IC -- VCE 50 Collector Current, IC -- mA IC -- VCE [TR] 12 A 4 0 0μ 350μA 300μA 50 0μ A μA 450 160 IT09862 40 250μA 200μA 30 150μA 20 100μA 50μA 10 [TR] 50μA 45μA 10 Collector Current, IC -- mA 0 8 40μA 35μA 30μA 6 25μA 20μA 4 15μA 10μA 5μA 2 IB=0μA 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR10340 IC -- VBE 160 IB=0μA 0 1.0 [TR] hFE -- IC 2 ITR10341 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 100 Ta=75°C 25°C --25°C Collector Current, IC -- mA 1000 120 80 60 40 7 5 3 Ta=75°C 2 25°C --25°C 100 7 20 5 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10342 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10343 No.8278-4/6 CPH5901 f T -- IC [TR] VCE=6V [TR] f=1MHz 5 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 5 2 100 ITR10344 Cob -- VCB 3 [TR] 5 3 2 1.0 3 5 7 10 ITR10345 VCE(sat) -- IC [TR] IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 1.0 3 2 10 7 Emitter-to-Base Voltage, VEB -- V f=1MHz Output Capacitance, Cob -- pF Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, f T -- MHz 7 1.0 7 5 3 2 0.1 75°C Ta= °C --25 7 5 25 °C 3 7 2 1.0 5 5 7 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10346 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA [TR] 2 100 ITR10347 PC -- Ta 400 [TR] IC / IB=10 350 Collector Dissipation, PC -- mW Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 1.0 Ta= --25°C 7 3 1.0 25°C 75°C 5 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 50 0. 8m m ) 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10348 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09863 No.8278-5/6 CPH5901 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8278-6/6