ECH8102 Ordering number : ENA1420 SANYO Semiconductors DATA SHEET ECH8102 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features • • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCES -30 V -30 V VCEO VEBO -30 V -6 V -12 A Collector Current (Pulse) IC ICP -24 A Base Current IB -1.2 A Collector Dissipation 1.6 W Junction Temperature PC Tj Storage Temperature Tstg Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current When mounted on ceramic substrate (900mm2×0.8mm) 150 °C -55 to +150 °C Marking : GB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D0209EA TK IM TC-00002127 No. A1420-1/5 ECH8102 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO IECO Emitter Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ VCB= -30V, IE=0A VEB= -4V, IC=0A μA hFE2 VCE= -2V, IC= -4A 150 hFE3 VCE= -2V, IC= -10A 100 fT Cob VCE= -10V, IC= -500mA 140 120 VCE(sat)1 VCB= -10V, f=1MHz IC= -6A, IB= -300mA VCE(sat)2 IC= -2A, IB= -40mA VBE(sat) V(BR)CBO IC= -2A, IB= -40mA IC= -10μA, IE=0A -30 V V(BR)CES IC= -100μA, RBE=0Ω -30 V V(BR)CEO IC= -1mA, RBE=∞ -30 V V(BR)EBO ton IE= -10μA, IC=0A -6 See specified Test Circuit. 91 tstg tf See specified Test Circuit. 125 ns See specified Test Circuit. 17 ns 560 -80 MHz pF -135 mV -50 -85 mV -0.85 -1.2 V V ns Electrical Connection 8 7 6 5 1 2 3 4 2.9 0.25 μA -1 200 Top View 0.15 5 2.3 0 t o 0.02 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view 4 1 0.65 0.3 0.9 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 2.8 μA -0.1 hFE1 unit : mm (typ) 7011A-005 0.25 -0.1 VEC= -4.5V, IC=0A VCE= -2V, IC= -500mA Package Dimensions 8 Unit max Bot t om View SANYO : ECH8 No. A1420-2/5 ECH8102 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT VOUT IB2 RB VR 50Ω RL + + 100μF 470μF VBE=5V VCC= --12V IC= --50IB1=25IB2= --5A IC -- VCE A --20mA --15mA A --70m --4 --10mA --3 --2 --5mA --8 --6 --4 --25°C --5 --25mA --10 25°C --6 --30mA VCE= --2V Ta=75° C --7 --40mA --35mA --45mA Collector Current, IC -- A --8 IC -- VBE --12 --100mA --90mA Collector Current, IC -- A --9 --50mA --6 0m --80mA --10 --2 --1 0 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V hFE -- IC 1000 DC Current Gain, hFE --25°C 100 7 5 25°C --25°C 7 5 2 2 3 5 7 --1.0 2 3 Collector Current, IC -- A f T -- IC 5 10 --0.01 5 7 --10 2 3 IT14434 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Cob -- VCB 7 5 7 --10 2 3 IT14435 f=1MHz VCE= --10V 5 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz --1.2 IT14433 100 3 5 7 --0.1 --1.0 VCE= --2V 2 2 2 3 --0.8 Ta=75°C 3 3 10 --0.01 --0.6 hFE -- IC 5 25°C 2 --0.4 7 Ta=75°C 3 --0.2 Base-to-Emitter Voltage, VBE -- V VCE= --0.5V 5 0 IT14456 1000 7 DC Current Gain, hFE 0 --1.8 --2.0 2 100 7 5 3 2 3 2 100 7 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT14436 5 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 IT14437 No. A1420-3/5 ECH8102 VCE(sat) -- IC 3 IC / IB=10 3 C 5° 2 =7 Ta C C 5° --2 --10 7 5 3 2 5°C Ta= --2 75°C 25°C --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VCE(sat) -- IC --10 5°C Ta= --2 75°C 7 5 25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V °C 75 C = 5° Ta --2 5 3 2 Ta= --25°C 75°C --10 25°C 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VBE(sat) -- IC 5 7 --10 2 3 IT14439 ASO s era 1m op tio n( --1.0 7 5 Ta = 25 °C ) 3 2 --0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 75°C 5 25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT14441 PC -- Ta When mounted on ceramic substrate (900mm2×0.8mm) 1.6 s 0μ DC Ta= --25°C 7 1.8 10 50 0 10 μs 10 ms 0m s --1.0 Collector Current, IC -- A ≤10μs IC= --12A 2 2 --0.01 5 7 --10 2 3 IT14440 ICP= --24A 3 2 3 2 °C 75 C 5° --2 = Ta 2 IC / IB=50 °C 7 --10 7 5 3 IC / IB=50 --100 3 2 °C 25 5 3 2 5 7 2 --0.01 5 7 --10 2 3 IT14438 25 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 7 --100 3 Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 ° 25 IC / IB=20 2 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 7 5 VCE(sat) -- IC 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 5 IT14442 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14443 No. A1420-4/5 ECH8102 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. PS No. A1420-5/5