SANYO MCH6541

MCH6541
Ordering number : EN8949
SANYO Semiconductors
DATA SHEET
MCH6541
PNP / NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
Applications
•
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
•
•
Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Collector-to-Emitter Voltage
VCBO
VCEO
Emitter-to-Base Voltage
VEBO
Collector Current
Conditions
Ratings
Unit
(--30)40
V
(--)30
V
(--)5
IC
(--)700
Collector Current (Pulse)
ICP
Collector Dissipation
PC
When mounted on ceramic substrate (600mm2✕0.8mm) 1unit
Total Power Dissipation
PT
Tj
When mounted on ceramic substrate (600mm2✕0.8mm)
Junction Temperature
Storage Temperature
Tstg
V
mA
(--)3
A
0.5
W
0.55
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)30V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
hFE
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : EP
fT
Cob
VCE=(--)2V, IC=(--10)50mA
VCE=(--)2V, IC=(--)50mA
VCB=(--)10V, f=1MHz
(200)300
(500)800
(520)540
MHz
(4.7)3.3
pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22008EA TI IM TC-00001087 No.8949-1/5
MCH6541
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
typ
IC=(--)200mA, IB=(--)10mA
IC=(--)200mA, IB=(--)10mA
Unit
max
(--110)85
(--220)190
(--)0.9
(--)1.2
mV
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
Turn-On Time
V(BR)EBO
ton
IE=(--)10μA, IC=0A
See specified Test Circuit.
Storage Time
tstg
See specified Test Circuit.
(125)255
ns
tf
See specified Test Circuit.
(25)40
ns
Fall Time
Package Dimensions
(--30)40
V
(--)30
V
(--)5
V
35
ns
Electrical Connection
2.0
6
5
0.25
5
4
1 : Emitter1 (PNP TR)
2 : Base1 (PNP TR)
3 : Collector2 (NPN TR)
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)
1
2
3
Top view
4
0 to 0.02
1
2
3
0.65
0.3
0.85
0.07
6
0.15
2.1
1.6
0.25
unit : mm (typ)
7022A-012
1
2
3
1 : Emitter1 (PNP TR)
2 : Base1 (PNP TR)
3 : Collector2 (NPN TR)
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)
6
5
4
SANYO : MCPH6
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=12V
IC=20IB1= --20IB2=300mA
For PNP, the polarity is reversed.
No.8949-2/5
MCH6541
--400
600
--3mA
--2mA
--300
IC -- VCE
700
30m 20m
A
A
15m
A
--500
[PNP]
A
--20m
A
--15m
A
--10m
A
m
--7
--5mA
Collector Current, IC -- mA
-mA 40mA
--50
--600
Collector Current, IC -- mA
A
A
0m --25m
--3
--1mA
--200
--500μA
500
[NPN]
7mA
A
10m
5mA
3mA
2mA
400
1mA
50m
A
IC -- VCE
--700
300
400μA
200
200μA
100
--100
0
0
IB=0μA
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
IC -- VBE
--800
IB=0μA
100
200
300
400
500
600
700
800
Collector-to-Emitter Voltage, VCE -- mV
IT05049
[PNP]
IC -- VBE
800
[NPN]
--300
--200
400
300
--25°C
--400
500
°C
25°C
--500
600
Ta=7
5
Collector Current, IC -- mA
--600
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- mA
700
200
100
--100
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0
--1.2
[PNP]
DC Current Gain, hFE
--25°C
2
100
0.8
1.0
IT05083
[NPN]
VCE=2V
Ta=75°C
7
3
0.6
hFE -- IC
1000
Ta=75°C
25°C
5
0.4
Base-to-Emitter Voltage, VBE -- V
VCE= --2V
7
0.2
IT05050
hFE -- IC
1000
DC Current Gain, hFE
1000
IT05082
VCE=2V
VCE= --2V
--700
900
25°C
5
--25°C
3
2
7
5
3
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
[PNP]
IC / IB=20
7
5
3
2
--100
7
C
75°
Ta=
5°C
--2
5
3
2
--10
--1.0
C
25°
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05054
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1000
100
1.0
5 7--1000
IT05051
VCE(sat) -- IC
1000
7
5
5 7 1000
IT05084
[NPN]
IC / IB=20
3
2
100
7
5
°C
75
3
2
2
Ta=
5°C
5°C
--2
10
7
5
3
2
1.0
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05085
No.8949-3/5
MCH6541
VCE(sat) -- IC
3
[PNP]
IC / IB=50
--1000
7
5
3
2
5°C
--100
7
7
Ta=
5°C
--2
5
3
C
25°
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
Ta= --25°C
75°C
5
25°C
3
2
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Cob -- VCB
10
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
3
2
5
7
--10
2
2
3
5 7 100
2
IT05053
f T -- IC
[PNP]
[NPN]
IC / IB=20
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
2
5 7 10
3
2
3
5 7 100
2
[NPN]
f=1MHz
7
5
3
2
2
3
5
7
10
2
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05052
3
Collector-to-Base Voltage, VCB -- V
fT -- IC
1000
Gain-Bandwidth Product, fT -- MHz
Gain-Bandwidth Product, f T -- MHz
5
5 7 1000
IT05087
3
Cob -- VCB
5
IT05088
[NPN]
VCE=10V
VCE= --10V
7
5 7 1000
3
IT05086
VBE(sat) -- IC
1.0
1.0
5
3
Collector-to-Base Voltage, VCB -- V
1000
5 7 10
3
10
5
3
2
[PNP]
7
2
3
Collector Current, IC -- mA
f=1MHz
0.1
--1.0
5°C
=2
Ta
5°C
--2
2
0.1
1.0
5 7--1000
IT05056
Collector Current, IC -- mA
7
5
7
5
7
°C
75
100
10
IC / IB=20
--1.0
3
2
Collector Current, IC -- mA
[PNP]
7
5
10
1.0
5 7--1000
IT05055
Collector Current, IC -- mA
[NPN]
IC / IB=50
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
VCE(sat) -- IC
1000
7
5
3
2
100
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05089
No.8949-4/5
MCH6541
Ron -- IB
100
7
5
7
OUT
1kΩ
2
ON Resistance, Ron -- Ω
ON Resistance, Ron -- Ω
10
IN
3
IB
10
7
5
Ron -- IB
[PNP]
1kΩ
f=1MHz
3
2
1.0
7
5
3
[NPN]
1kΩ
f=1MHz
OUT
IN
5
1kΩ
3
IB
2
1.0
7
5
3
2
2
0.1
--0.1
2
3
5
7
2
--1.0
3
Base Current, IB -- mA
PD -- Ta
Allowable Power Dissipation, PD -- W
0.6
5
7
--10
IT06403
0.1
0.1
2
3
5
7
1.0
2
3
5
Base Current, IB -- mA
7
10
IT06793
[PNP/NPN]
When mounted on ceramic substrate
(600mm2✕0.8mm)
0.55
0.5
0.4
To
t
al
0.3
di
ss
1u
ni
t
ip
at
io
n
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10744
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No.8949-5/5