CPH3251 Ordering number : ENA0871A SANYO Semiconductors DATA SHEET CPH3251 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCES 150 150 V V VCEO VEBO 120 V 7 V IC 2 A Collector Current (Pulse) ICP 3 Base Current 400 Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg Collector Current When mounted on ceramic substrate (600mm2✕0.8mm) A mA 0.9 W 150 °C --55 to +150 °C Marking : DW Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21308 TI IM / D1207EA TI IM TC-00001081 No. A0871-1/4 CPH3251 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=100V, IE=0A VEB=5V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=5V, IC=100mA VCE=10V, IC=100mA Output Capacitance VCE(sat)2 V(BR)CES V(BR)CEO IC=100μA, RBE=0Ω IC=1mA, RBE=∞ V(BR)EBO ton tstg IE=10μA, IC=0A See specified Test Circuit. tf Storage Time Fall Time μA 1 μA 560 MHz pF 100 Collector-to-Emitter Breakdown Voltage Turn-ON Time 1 13 V(BR)CBO Emitter-to-Base Breakdown Voltage Unit max 130 Collector-to-Base Breakdown Voltage VBE(sat) Collector-to-Emitter Breakdown Voltage typ 200 IC=0.5A, IB=50mA IC=1A, IB=100mA IC=10μA, IE=0A Base-to-Emitter Saturation Voltage min VCB=10V, f=1MHz IC=1A, IB=100mA VCE(sat)1 Collector-to-Emitter Saturation Voltage Ratings Conditions 150 mV 60 90 mV 0.85 1.2 V 150 V 150 V 120 V 7 V 50 ns See specified Test Circuit. 1250 ns See specified Test Circuit. 60 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7015A-003 0.6 2.9 IB1 PW=20μs D.C.≤1% 0.15 3 OUTPUT IB2 VR10 RB 50Ω + 100μF 1 + 470μF 2 0.95 1 : Base 2 : Emitter 3 : Collector 0.4 VBE= --5V VCC=60V IC=10IB1= --10IB2=0.5A 0.9 0.2 0.6 RL 0.05 1.6 2.8 0.2 INPUT SANYO : CPH3 IC -- VCE 2.0 A mA 90m A 30mA 1.0 0m 1.2 7 Collector Current, IC -- A A 0m 60mA 50mA 40mA 1.6 1.4 1.8 80 20mA 10 Collector Current, IC -- A 1.8 0.8 10mA 0.6 5mA 0.4 60mA 0mA 7 50mA 40mA 30mA 1.6 1.4 20mA 1.2 10mA 1.0 0.8 2mA 0.6 0.4 0.2 0 0 IC -- VCE 2.0 0.2 IB=0mA 0.1 0.2 0.3 0.4 Collector-to-Emitter Voltage, VCE -- V 0.5 IT12718 0 0 IB=0mA 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V 5 IT12719 No. A0871-2/4 CPH3251 IC -- VBE 2.0 5 VCE=5V Ta=75°C 25°C 1.6 DC Current Gain, hFE 3 1.4 1.2 1.0 0.8 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 1.8 0.6 0.4 --25°C 2 100 7 5 3 0.2 2 0.01 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 0.1 7 5°C 7 C 25° 5°C --2 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 2 3 5 7 1.0 25°C 1.0 Ta= --25°C 7 75°C 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IT12722 2 3 IT12723 Cob -- VCB 7 f=1MHz 5 Output Capacitance, Cob -- pF 2 100 7 5 3 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A DC 5 2 3 5 7 1.0 10 1m m s 10 0m er s ati on (T a= 25 °C ) s op 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7100 2 3 5 7 10 2 3 5 7 100 IT12725 PC -- Ta When mounted on ceramic substrate (600mm2✕0.8mm) 0.9 Ta=25°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 5 7 0.1 7 <10μs IC=2A 0.001 0.01 2 3 10 1.0 ICP=3A 0.1 7 5 3 2 0.01 7 5 3 2 2 Collector-to-Base Voltage, VCB -- V ASO μs μs 500 1.0 7 5 3 2 1.0 IT12724 100 7 5 3 2 3 3 0.1 7 Collector Dissipation, PC -- W Gain-Bandwidth Product, fT -- MHz 3 2 VCE=10V Collector Current, IC -- A 2 IT12721 VBE(sat) -- IC 3 0.01 3 fT -- IC 3 7 0.1 IC / IB=10 2 3 5 3 3 = Ta 3 Collector Current, IC -- A IC / IB=10 5 2 IT12720 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V hFE -- IC 7 VCE=5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 IT12726 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12717 No. A0871-3/4 CPH3251 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A0871-4/4